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    diode in 400

    Abstract: hfu5n40
    Text: BVDSS = 400 V RDS on typ = 1.27 Ω HFD5N40 / HFU5N40 ID = 3.4 A 400V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD5N40  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU5N40 1.Gate 2. Drain 3. Source


    Original     		PDF HFD5N40 HFU5N40 HFD5N40 O-252 O-251 diode in 400 hfu5n40