Untitled
Abstract: No abstract text available
Text: RFHA1101 RFHA1101 4.3W GaN On SiC Power Amplifier Die-On-Carrier The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete amplifier die-on carrier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband
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RFHA1101
RFHA1101
36dBm
DS131023
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CGH40025P
Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors
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Abstract: No abstract text available
Text: RFHA1101D RFHA1101D 4.3W GaN on SiC Power Amplifier Die Package: Die The RFHA1101D is a 28V, 4.3W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical,
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RFHA1101D
RFHA1101D
36dBm
DS131025
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CGHV1J025D
Abstract: G40V4 bonding wire cree
Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J025D
CGHV1J025D
18GHz
High7703
G40V4
bonding wire cree
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CGHV1J006D
Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J006D
CGHV1J006D
18GHz
E7703
transistor j813
G40V4
hemt .s2p
B 1318
191986
high power transistor s-parameters
cree gate resistor
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CGHV1J025D
Abstract: No abstract text available
Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J025D
CGHV1J025D
18GHz
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Untitled
Abstract: No abstract text available
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J006D
CGHV1J006D
18GHz
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Untitled
Abstract: No abstract text available
Text: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is
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CGHV1J070D
CGHV1J070D
18GHz
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CGHV1J025D
Abstract: No abstract text available
Text: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
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CGHV1J025D
CGHV1J025D
18GHz
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CGHV1J070D
Abstract: G40V4 Transistor 17567
Text: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is
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CGHV1J070D
CGHV1J070D
18GHz
E7703
G40V4
Transistor 17567
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SW2100D
Abstract: RFSW2100D ds1303
Text: R RFSW2 2100D 55W GaN-on-SiC Refflective SPD DT RF Switch Bare Die 1mm x 0.8m mm Features • Broadban nd Operation 30 0MHz - 6GHz Advanced d GaN HEMT Tecchnology 2GHz Typical Performancce o Insertio on Loss = 0.34d dB o Isolation = 37dB o P0.1dB of
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2100D
RFSW2100D
DS130314
SW2100D
ds1303
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Untitled
Abstract: No abstract text available
Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
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cgh60120D
Abstract: No abstract text available
Text: CGH60120D 120 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60120D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to PN: CGH6012 0D silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
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CGH60120D
CGH60120D
CGH6012
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Untitled
Abstract: No abstract text available
Text: RF3932D RF3932D 60W GaN on SiC Power Amplifier Die Package: Die The RF3932D is a 48V, 60W, GaN on SiC high power discrete amplifier die designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general
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RF3932D
RF3932D
49dBm
DS130906
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CGH60060D
Abstract: hemt .s2p 5609 transistor
Text: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift
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CGH60060D
CGH60060D
CGH6006
hemt .s2p
5609 transistor
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5609 transistor
Abstract: CGH60060D bonding wire cree
Text: CGH60060D 60 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60060D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift
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CGH60060D
CGH60060D
CGH6006
5609 transistor
bonding wire cree
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CGH60008D
Abstract: No abstract text available
Text: CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60008D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,
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CGH60008D
CGH60008D
CGH6000
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cree 3535
Abstract: No abstract text available
Text: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal
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CGH60030D
CGH60030D
CGH6003
cree 3535
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CGH60008D
Abstract: No abstract text available
Text: CGH60008D 8 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60008D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,
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CGH60008D
CGH60008D
CGH6000
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CGH60030D
Abstract: CGH6003 cree 3535
Text: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal
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CGH60030D
CGH60030D
CGH6003
cree 3535
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CGH60015D
Abstract: bonding wire cree
Text: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,
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CGH60015D
CGH60015D
CGH6001
bonding wire cree
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Untitled
Abstract: No abstract text available
Text: CGH60015D 15 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60015D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity,
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CGH60015D
CGH60015D
CGH6001
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SGA-4300
Abstract: No abstract text available
Text: SGA-4300 SGA-4300DC4.5GHz, Cascadable SiGe HBT MMIC Amplifier DC-4.5GHZ, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description Features The SGA-4300 is a high performance SiGe HBT MMIC Amplifier in die form 0.66mmx0.38mm . A Darlington configuration featuring 1 micron emitters provides high FT
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SGA-4300DC4
SGA-4300
SGA-4300
66mmx0
DS110603
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Untitled
Abstract: No abstract text available
Text: SGA-4300 SGA-4300DC4.5GHz, Cascadable SiGe HBT MMIC Amplifier DC-4.5GHZ, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: Bare Die Product Description Features The SGA-4300 is a high performance SiGe HBT MMIC Amplifier in die form 0.66mmx0.38mm . A Darlington configuration featuring 1 micron emitters provides high FT
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SGA-4300
SGA-4300DC4
SGA-4300
66mmx0
DS110603
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