Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGH6003 Search Results

    SF Impression Pixel

    CGH6003 Price and Stock

    MACOM CGH60030D-GP4

    RF MOSFET HEMT 28V DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH60030D-GP4 Tray 50
    • 1 -
    • 10 -
    • 100 $99.975
    • 1000 $99.975
    • 10000 $99.975
    		Buy Now
    Mouser Electronics CGH60030D-GP4
    • 1 -
    • 10 $149.03
    • 100 $149.03
    • 1000 $149.03
    • 10000 $149.03
    		Get Quote
    Richardson RFPD CGH60030D-GP4 1
    • 1 $160.27
    • 10 $160.27
    • 100 $160.27
    • 1000 $160.27
    • 10000 $160.27
    		Buy Now

    MACOM CGH60030D-GP5

    GaN FETs DIE, 30W, 6.0GHz, GaN HEMT, GP5, 510398,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGH60030D-GP5
    • 1 -
    • 10 -
    • 100 -
    • 1000 $81.88
    • 10000 $81.88
    		Get Quote

    CGH6003 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH60030D-GP4 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 28V DIE Original PDF

    CGH6003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cree 3535

    Abstract: No abstract text available
    Text: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal


    Original     		PDF CGH60030D CGH60030D CGH6003 cree 3535

    CGH60030D

    Abstract: CGH6003 cree 3535
    Text: CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree’s CGH60030D is a gallium nitride GaN High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal


    Original     		PDF CGH60030D CGH60030D CGH6003 cree 3535

    CGH40025P

    Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
    Text: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors


    Original     		PDF