HAT2175H Search Results

HAT2175H Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
HAT2175H-EL-E		Renesas Electronics Corporation	Nch Single Power Mosfet 100V 15A 42Mohm Lfpak

HAT2175H Price and Stock

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Renesas Electronics Corporation HAT2175H-EL-E MOSFET N-CH 100V 15A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HAT2175H-EL-E	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	HAT2175H-EL-E		7,062			1 - 10 - 100 - 1000 - 10000 -	Get Quote

HAT2175H Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HAT2175H		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF
HAT2175H		Renesas Technology	MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 15; RDS (ON) typ. (ohm) @10V: 0.033; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1445; toff ( us) typ: 0.028; Package: LFPAK		Original	PDF
HAT2175H-EL-E		Renesas Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 15A 5LFPAK		Original	PDF

HAT2175H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HAT2175H Abstract: No abstract text available Text: HAT2175H Silicon N Channel Power MOS FET Power Switching REJ03G0006-0400 Rev.4.00 Sep 20, 2005 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 33 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A)	Original	PDF	HAT2175H REJ03G0006-0400 PTZZ0005DA-A) HAT2175H
HAT2175H Abstract: No abstract text available Text: HAT2175H Silicon N Channel Power MOS FET Power Switching REJ03G0006-0300Z Rev.3.00 Apr.14.2003 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS on = 33 mΩ typ. (at VGS = 10 V) Outline LFPAK	Original	PDF	HAT2175H REJ03G0006-0300Z HAT2175H
DNP resistors Abstract: AN1459 V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE Text: ISL8107EVAL2Z Application Note June 9, 2009 AN1459.0 Introduction Circuit Setup The ISL8107 is a single-phase PWM controller that operates from 9V to 75V bias supply voltage. The PWM controller drives an external high-side N-Channel MOSFET in a non-synchronous buck converter topology. The ISL8107	Original	PDF	ISL8107EVAL2Z AN1459 ISL8107 ISL8107 com/data/fn/fn6605 ISL8107EVAL2Z DNP resistors V10P10 Ceramic Resistor 10W HAT2175H power capacitor 2.2uH POWER INDUCTOR capacitor 100uF/100V Q1/100PF/50V GT11MSCKE
RJ102 Abstract: HA16163T Nihon Inter Electronics CHIP DIODE m7 NIHON PULSE rj101 rohm M7 RJ105 diode m7 toshiba HAT2175H Text: HA16163T DC-DC Converter Evaluation Board HA16163 EVB2.0 480 kHz, 48 V, 3.3 V, 100 W Isolated power supply Application Note REJ05F0002-0100Z (Previous: ADE-504-008(Z) Rev.1.00 Apr.22.2003 Renesas Technology Corp. Cautions Keep safety first in your circuit designs!	Original	PDF	HA16163T HA16163 REJ05F0002-0100Z ADE-504-008 2SB1188 HA16163T RJ102 Nihon Inter Electronics CHIP DIODE m7 NIHON PULSE rj101 rohm M7 RJ105 diode m7 toshiba HAT2175H
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	PDF	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	PDF	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	PDF	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
rjk5020 Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174 Text: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment	Original	PDF	HA16174 HA16158 HA16341 HA16342 HA16167 rjk5020 HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
1002ds Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5	Original	PDF	24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
HAT2175H Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
HAT1125H Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient	Original	PDF	uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
H7N1009MD Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility	Original	PDF	CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
HAT2175H Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF