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    H7N1005LM Search Results

    H7N1005LM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H7N1005LM Renesas Technology MOSFET, Switching; VDSS (V): 100; ID (A): 15; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff ( us) typ: 0.042; Package: LDPAK (S)- (2) Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0100 Rev.1.00 Apr 07, 2006 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H7N1005LD, H7N1005LS, H7N1005LM REJ03G0391-0100 PRSS0004AE-A PRSS0004AE-B H7N1005LD H7N1005LS PRSS0004AE-C

    H7N1005LMTL-E

    Abstract: H7N1005LD H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C
    Text: H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 2006 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A


    Original     		PDF H7N1005LD, H7N1005LS, H7N1005LM REJ03G0391-0200 PRSS0004AE-A PRSS0004AE-B H7N1005LD H7N1005LS PRSS0004AE-C H7N1005LMTL-E H7N1005LD H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


    Original     		PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as

    H7N1005LD

    Abstract: H7N1005LD-E H7N1005LM H7N1005LS PRSS0004AE-A PRSS0004AE-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF