H7N1005DS Search Results

H7N1005DS Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
H7N1005DSTR-E		Renesas Electronics Corporation	Nch Single Power Mosfet 100V 12A 110Mohm DPAK(S)/To-252

H7N1005DS Price and Stock

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Renesas Electronics Corporation H7N1005DSTL-E (Alt: H7N1005DSTL-E)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	H7N1005DSTL-E			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

H7N1005DS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H7N1005DS		Renesas Technology	MOSFET, Switching; VDSS (V): 100; ID (A): 12; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.085; RDS (ON) typ. (ohm) @4V[4.5V]: [0.105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 830; toff ( us) typ: 0.042; Package: DPAK (S)		Original	PDF

H7N1005DS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
H7N1005DL Abstract: H7N1005DS H7N1005DSTL-E PRSS0004ZD-B PRSS0004ZD-C Text: H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1736-0100 Rev.1.00 Sep 19, 2008 Features • Low on-resistance RDS on = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-B	Original	H7N1005DL, H7N1005DS REJ03G1736-0100 PRSS0004ZD-B PRSS0004ZD-C H7N1005DL H7N1005DS H7N1005DSTL-E PRSS0004ZD-B PRSS0004ZD-C	PDF
H7N1005DL Abstract: H7N1005DS H7N1005DSTL-E PRSS0004ZD-B PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF