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    74HC14 marking code

    Abstract: h11agx H11AG1M
    Text: H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers tm Features Description • High efficiency low degradation liquid epitaxial IRED The H11AGXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device


    Original     		PDF H11AG1M, H11AG2M, H11AG3M H11AGXM 74HC14 marking code h11agx H11AG1M

    soc1044

    Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
    Text: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0033602-A MOCD213R2VM MOCD217R1M MOCD217R2VM MOCD223R1M MOCD223R2VM OF4822300W SL5500300W SL5500S SL5501 soc1044 SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx

    h11cx

    Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
    Text: Date Created: 1/27/2004 Date Issued: 2/24/2004 PCN # 20034307-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0034307-A MOC8102 MOC81023S MOC8102S MOC8103 MOC81033S MOC8103SD MOC8104300 MOC81043SD MOC8104W h11cx H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422