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    ROHM Semiconductor RGT40TM65DGC9

    IGBT TRNCH FLD 650V 17A TO220NFM
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    ROHM Semiconductor RGT40TS65DGC13

    IGBT TRENCH FS 650V 40A TO247G
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    ROHM Semiconductor RGT40TS65DGC11

    IGBT 650V 40A 144W TO-247N
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    Amphenol Industrial Operations GT40TF

    MIL-5015 GT/ACA-B BAYONET CAP
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    Amphenol Industrial Operations GT40TV

    CAP
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    GT40T Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT40T101 Toshiba Discrete IGBTs Original PDF
    GT40T101 Toshiba N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) Original PDF
    GT40T101 Toshiba Discrete IGBTs Original PDF
    GT40T101 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel MOS Type Scan PDF
    GT40T301 Toshiba TRANS IGBT CHIP N-CH 1500V 40A 3(2-21F2C) Original PDF
    GT40T301 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT40T301 Toshiba Original PDF
    GT40T301 Toshiba Discrete IGBTs Original PDF
    GT40T301 Toshiba Discrete IGBTs Original PDF
    GT40T301(Q) Toshiba TRANS IGBT CHIP N-CH 1500V 40A 3(2-21F2C) Original PDF
    GT40T321 Toshiba GT40T321 - TRANSISTOR 40 A, 1500 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Original PDF
    GT40TF Amphenol Connector Accessories Clamp Original PDF

    GT40T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS l Enhancement−Mode l High Speed : tf = 0.4 µs Max. (IC = 40 A) l Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT40T101 2-21F2C

    Parallel resonance inverter

    Abstract: TOSHIBA IGBT DATA BOOK GT40T301 GT40
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)


    Original     		PDF GT40T301 Parallel resonance inverter TOSHIBA IGBT DATA BOOK GT40T301 GT40

    GT40T102

    Abstract: No abstract text available
    Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)


    Original     		PDF GT40T102 2-21F2C GT40T102

    GT40T301

    Abstract: No abstract text available
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 s typ. (IC = 40 A)


    Original     		PDF GT40T301 GT40T301

    Parallel resonance inverter

    Abstract: GT40T302
    Text: GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf = 0.23 s typ. (IC = 40 A)


    Original     		PDF GT40T302 Parallel resonance inverter GT40T302

    Untitled

    Abstract: No abstract text available
    Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed


    Original     		PDF GT40T321

    Untitled

    Abstract: No abstract text available
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)


    Original     		PDF GT40T301 2-21F2C

    40t321

    Abstract: GT40T321 gt40t
    Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed


    Original     		PDF GT40T321 40t321 GT40T321 gt40t

    GT40T301

    Abstract: No abstract text available
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)


    Original     		PDF GT40T301 GT40T301

    GT40T302

    Abstract: IC401
    Text: GT40T302 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT40T302 ○ 並列共振スイッチング用 単位: mm • 高速ダイオードを内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT40T302 2-21F2C 20070701-JA GT40T302 IC401

    GT40T301

    Abstract: MMA 200 IGBT Parallel resonance inverter
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A)


    Original     		PDF GT40T301 GT40T301 MMA 200 IGBT Parallel resonance inverter

    gt40t101

    Abstract: bipolar power transistor data toshiba 2-21F2C
    Text: GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT40T101 Unit: mm HIGH POWER SWITCHING APPLICATIONS Enhancement−Mode High Speed : tf = 0.4 µs Max. (IC = 40 A) Low Saturation : VCE (sat) = 5.0 V (Max.) (IC = 40 A) MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT40T101 2-21F2C gt40t101 bipolar power transistor data toshiba 2-21F2C

    40t321

    Abstract: GT40T321 ic401
    Text: GT40T321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT40T321 ○ 民生用 ○ 電圧共振インバータスイッチング専用 ○ 第６世代 単位: mm • 高速 FRD を内蔵しています。 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF GT40T321 2-16C1C 40t321 GT40T321 ic401

    Untitled

    Abstract: No abstract text available
    Text: GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT40T301 High Power Switching Applications • FRD included between emitter and collector • Enhancement-mode • High speed IGBT : tf = 0.25 µs typ. (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)


    Original     		PDF GT40T301

    GT40T321

    Abstract: No abstract text available
    Text: GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT • FRD included between emitter and collector • Enhancement mode type • High speed


    Original     		PDF GT40T321 GT40T321

    Untitled

    Abstract: No abstract text available
    Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)


    Original     		PDF GT40T102 2-21F2C

    Untitled

    Abstract: No abstract text available
    Text: GT40T101 HIGH POWER SWITCHING APPLICATIONS. U nit in mm 80.JMAX. • Enhancement-Mode • High Speed • Low Saturation : V c e sat = 5.0V (Max.) (Ic = 40A) h * J¡ : tf=0.4^is (Max.) (Iq = 40A) ¥ , = g j | . 1 1.5 , i r 7 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF GT40T101 2-21F2C CHARACTERISTICST40T101

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)


    OCR Scan     		PDF GT40T101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 U nit in mm HIGH POWER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf=0.4//s Max. (Iq = 40A) Low Saturation : (sat) = 5-0V (Max.) (Iq = 40A)


    OCR Scan     		PDF GT40T101 2-21F2C 75grm

    Gt40t101

    Abstract: TF010
    Text: TOSHIBA GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 Unit in mm HIGH POWER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf = 0.4 jus Max. (Iq = 40 A) Low Saturation : VQ3 (sat) = 5.0 V (Max.) (l£ = 40 A)


    OCR Scan     		PDF GT40T101 2-21F2C Gt40t101 TF010

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT40T101 G T 4 Q T 1 01 TO SH IBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL M O S TYPE Unit in mm HIGH POW ER SW ITCHING APPLICATIONS. Enhancement-Mode High Speed : tf=0.4/is Max. (l£ = 40A) Low Saturation : (sat) = 5.0V (Max.) (Iq = 40A)


    OCR Scan     		PDF GT40T101

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 HIGH PO W ER SWITCHING APPLICATIONS. • • • Unit in mm Enhancement-Mode High Speed : tf=0.4/^s Max. (Iq = 40A) Low Saturation : V qe (sat) = 5.0V (Max.) (Iq = 40A)


    OCR Scan     		PDF GT40T101 2-21F2C

    Gt40t101

    Abstract: 2-21F2C
    Text: T O S H IB A GT40T101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 4 0 T 1 01 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. • • • Enhancement-Mode High Speed : tf=0.4^s Max. (l£ = 40A) Low Saturation : ( s a t ) “ 5.0V (Max.) (l£ = 40A)


    OCR Scan     		PDF GT40T101 Gt40t101 2-21F2C

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753