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    GT25G10 Search Results

    GT25G10 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT25G101 Toshiba N-channel IGBT, 400V, 25A Original PDF
    GT25G101 Toshiba IGBT Original PDF
    GT25G101 Toshiba Discrete IGBTs Original PDF
    GT25G101 Toshiba Discrete IGBTs Original PDF
    GT25G101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT25G101 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT25G101(SM) Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT25G101(SM) Toshiba N-channel IGBT, 400V, 25A Original PDF
    GT25G101SM Toshiba IGBT Original PDF
    GT25G101SM Unknown Catalog Scans - Shortform Datasheet Scan PDF
    GT25G101(SM) Toshiba TRANS IGBT CHIP N-CH 400V 25A 3(2-10S2C) Scan PDF
    GT25G101SM Toshiba N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Scan PDF
    GT25G102 Toshiba TRANS IGBT CHIP N-CH 400V 25A 3(2-10S1C) Original PDF
    GT25G102 Toshiba INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Original PDF
    GT25G102 Toshiba Discrete IGBTs Original PDF
    GT25G102 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    GT25G102(SM) Toshiba N-channel iso-gate bipolar transistor (MOS technology) Original PDF
    GT25G102(SM) Toshiba N-channel IGBT, 400V, 25A Original PDF
    GT25G102SM Toshiba IGBT Original PDF
    GT25G102SM Toshiba N CHANNEL IGBT (STROBE FLASH APPLICATIONS) Scan PDF

    GT25G10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 10S2C

    GT25G101

    Abstract: No abstract text available
    Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF GT25G101 2-10S1C GT25G101

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance : VCE sat =8V (Max.) (IC=170A) z Low Saturation Voltage z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF GT25G101 2-10S1C

    GT25G102

    Abstract: No abstract text available
    Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE sat = 8V (Max.) (IC = 150A) l Low Saturation Voltage l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G102 2-10S1C GT25G102

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    gt25g101

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    GT25G101

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    GT25G101

    Abstract: No abstract text available
    Text: GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE sat =8V (Max.) (IC=170A) z Enhancement−Mode z 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    Original     		PDF GT25G101 2-10S1C GT25G101

    GT25G102

    Abstract: No abstract text available
    Text: GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 150A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G102 2-10S1C GT25G102

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 SM TOSHIBA TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR G T 2 5 G 1 2 SILICON N-CHANNEL IGBT ( S M ) U n it in mm STROBE FLASH APPLICATIO NS • High Input Impedance • • • Low Saturation Voltage : v CE(sat) = 8V (Max.) (Ic = 150A) Enhancem ent-Mode


    OCR Scan     		PDF GT25G102 2-10S2C GT25G1Q2

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 01 ( S M ) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 170A) Enhancement-Mode 12V Gate Drive


    OCR Scan     		PDF GT25G101

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE GT25G102 SM STROBE FLASH APPLICATIONS Unit in nn 10.3MAX . High Input Impedance 132, . Low Saturation Voltage : Vcg(sat)= &V(Max.) (Ic=150A) • Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF GT25G102

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E sat = 8V (Max.) (IC = 150A)


    OCR Scan     		PDF GT25G102

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (sat) = 8V (Max.) (IC = 150A)


    OCR Scan     		PDF GT25G102 GT25G1

    Untitled

    Abstract: No abstract text available
    Text: GT25G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 150A)


    OCR Scan     		PDF GT25G102 GT25G1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E Sat = 8V (Max.) (IC = 150A) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF GT25G102

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASH APPLICATIONS SILICON N-CHANNEL IGBT G T 2 5 G 1 01 Unit in mm High Input Impedance Low Saturation Voltage : V qe sat = 8V (Max.) (Iq = 170A) Enhancement-Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF GT25G101 VCM-330V

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT25G102 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT2 5 G 102 U nit in mm STROBE FLASH APPLICATIONS • • • • H igh Input Impedance Low Saturation Voltage : VQ E say = 8V (Max. (Ic = 150A) Enhancement-Mode 12V Gate Drive


    OCR Scan     		PDF GT25G102 2-10S1C

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    GT25G102

    Abstract: No abstract text available
    Text: TOSHIBA GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 150A) Enhancement-Mode 12V Gate Drive


    OCR Scan     		PDF GT25G102 GT25G102

    transistor SM 200

    Abstract: 12V1 GT25G102 12V11 GT25
    Text: GT25G102 SM TO SHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 5 G 1 0 2 ( S M) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 150A) Enhancement-Mode


    OCR Scan     		PDF GT25G102 GT25G10 transistor SM 200 12V1 12V11 GT25

    lr4080

    Abstract: GT25
    Text: GT25G102 SM TOSHIBA T O S H IB A IN SU LATED G ATE B IP O LA R TRA N SISTO R SILICON N-CHANNEL IG BT GT25G102(S M ) STR O BE FLASH A PPLIC A TIO N S • • • • H igh Input Im pedance Low Saturation V oltage Enhancem ent-M ode 12V Gate Drive : V C E (sat) = 8V (Max.) (IC = 150A)


    OCR Scan     		PDF GT25G102 GT25G10 2-10S2C lr4080 GT25

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT25G101 T O S H IB A IN S U L A T E D G ATE B IP O LA R T R AN SISTO R SILICO N N -C H A N N E L IGBT Unit in mm STROBE FLASH A P P L IC A T IO N S 1 0 .3 M A X • • • • High Input Impedance Low Saturation Voltage : V j e (5at = 8V (Max.) (Iq = 170A)


    OCR Scan     		PDF GT25G101

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE GT25G101 STROBE FLASH APPLICATIONS Unit in ran 10.3MAX . High Input Impedance 1.32 5Ï IB . Low Saturation Voltage : VcE sat *8V(riax.) (Ic=170A) . Enhancement-Mode . 20V Gate Drive 1.6 MAX 0.76 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		PDF GT25G101 2-10S1C