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    GE200NB60S Search Results

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    GE200NB60S Price and Stock

    STMicroelectronics STGE200NB60S

    IGBT MOD 600V 200A 600W ISOTOP
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    DigiKey STGE200NB60S Tube 96 1
    • 1 $30.52
    • 10 $22.408
    • 100 $30.52
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    Avnet Americas STGE200NB60S Tube 400 14 Weeks 100
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    • 100 $19.54544
    • 1000 $18.38202
    • 10000 $18.38202
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    Mouser Electronics STGE200NB60S 190
    • 1 $27.3
    • 10 $20.68
    • 100 $19.3
    • 1000 $19.3
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    Newark STGE200NB60S Bulk 81 1
    • 1 $27.3
    • 10 $20.75
    • 100 $19.3
    • 1000 $19.3
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    STGE200NB60S Bulk 100
    • 1 -
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    • 100 $19.95
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    STMicroelectronics STGE200NB60S 1
    • 1 $26.75
    • 10 $20.27
    • 100 $18.91
    • 1000 $18.91
    • 10000 $18.91
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    TME STGE200NB60S 1
    • 1 $38.76
    • 10 $28.33
    • 100 $28.33
    • 1000 $28.33
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    Avnet Silica STGE200NB60S 10 15 Weeks 10
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    Chip1Stop STGE200NB60S Tube 60
    • 1 $17.6
    • 10 $17.2
    • 100 $17.1
    • 1000 $17.1
    • 10000 $17.1
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    EBV Elektronik STGE200NB60S 15 Weeks 10
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    SGS Semiconductor Ltd GE200NB60S

    N-CHANNEL 150A-600V-ISOTOP LOW DROP POWERMESH IGBT Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA GE200NB60S 40
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    GE200NB60S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GE200NB60S STMicroelectronics N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Original PDF

    GE200NB60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STGE200NB60S

    Abstract: GE200NB60S JESD97 M1113
    Text: GE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat GE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current


    Original     		PDF STGE200NB60S STGE200NB60S GE200NB60S JESD97 M1113

    SCHEMATIC WITH IGBTS

    Abstract: GE200NB60S JESD97 STGE200NB60S
    Text: GE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE VCES VCE sat GE200NB60S 600V (typ.) 1.2V 1.3V IC TC 150A 200A 100°C 25°C • High input impedance (voltage driven) ■ Low on-voltage drop (Vcesat) ■ Off losses include tail current


    Original     		PDF STGE200NB60S STGE200NB60S SCHEMATIC WITH IGBTS GE200NB60S JESD97

    GE200NB60S

    Abstract: STGE200NB60S Date Code Marking STMicroelectronics diode icl 707
    Text: GE200NB60S N-CHANNEL 150A - 600V - ISOTOP PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE GE200NB60S • ■ ■ ■ ■ VCES 600 V VCE sat (typ.) IC TC 1.2 V 1.3 V 150 A 200 A 100°C 25°C HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		PDF STGE200NB60S GE200NB60S STGE200NB60S Date Code Marking STMicroelectronics diode icl 707