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    GE006367

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 . LD 269 Chip 2.54 mm spacing GE006367 Cathode LD 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features


    OCR Scan     		PDF GE006367 80-Serie LD260 GE006367

    T20 96 diode

    Abstract: LD260 LD261-5/6 LD262 LD261 diode
    Text: LD 261 LD 262-269/260 SINGLE DIODE ARRAYS Infrared Emitters Dimensions in Inches mm GE006367 FEATURES • GaAs IR emltterdiode, made In a liquid phase epitaxy process • High reliability • Matches BPX 80-89 photofransistors • Availability: "A” Dimension (in mm)


    OCR Scan     		PDF GE006367 LD261 LD262 LD263 LD260 electronic50 lp-50 LD260-26B T20 96 diode LD261-5/6 LD261 diode

    UV diode 250 nm

    Abstract: SFH 508 SFH291
    Text: 3FW 2S1 SIEMENS High UV Sensitivity Silicon PiìolocHocle Dim ensions in inches mm 236(6.0) 134(3.4) '118(3.0) .570 (14.5) .491(12.5) 228 (5.8) Active die area It .200 0.326(8.3) 0.314(8.0) Anode (5.08) J _ r 0 .373 (9.5) 0 .354 (9.0) u 1 0.018(0.45) GE006367


    OCR Scan     		PDF GE006367 9X1CT14 6X1012 OHF01 SFH291 UV diode 250 nm SFH 508 SFH291

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 7.4 LD 260 LD 262 . LD 269 Chip in O CO (O o N GE006367 (O CO (O o o 0 Cathode (LD 263) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale


    OCR Scan     		PDF GE006367 80-Serie

    Untitled

    Abstract: No abstract text available
    Text: BPX81 2-10 TRANSISTOR ARRAYS BPX82— 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX81 Dimension “A*. Part No. Min. Max. BPX82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291 (7.4) BPX 84 .377 (9.6) .393 (10) BPX 85


    OCR Scan     		PDF BPX81 BPX82â BPX82 GE006367 1000lx, 950nm BPX81-3 BPX81-4 BPX81-2

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent


    OCR Scan     		PDF 41IAI 18-pln fl535t

    U850 diode

    Abstract: U850 KOM2108 84X101
    Text: SIEMENS features • Suitable for use in the visible light and near Infrared range • Low noise • Short switching time typ. 10 ne • Every single diode can be activated KOM2t08 5 x 5 Silicon PIN Photodiode Array Dimensions in inches (mm) i Chip position Epoxy resin transparent


    OCR Scan     		PDF KOM2t08 4x101l! KOM2108 U850 diode U850 KOM2108 84X101