k4n26323ae
Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003
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K4N26323AE-GC
128Mbit
32Bit
k4n26323ae
K4N26
K4N26323AE-GC20
K4N26323AE-GC22
K4N26323AE-GC25
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QG
256Mbit
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MCP67MV
Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Text: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13
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16Mx16
Page42
Page17
Page18
667MHz
Page11
G3-64
Page40
MCP67MD
Page24
MCP67MV
RTS5117
MCP67MV- A2
12VSUS
IT8511TE
D1703
D1804
D1803
asus
F9DC
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DA0ZR1
Abstract: NFW22 Pr1363 FW04 PC87541v 88e8038 quanta IR 334 foxconn 14 pin JTAG CONNECTOR
Text: 5 4 PCI-E 100MHz Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2010.01.09 20:49:27 +07'00' VGA 96MHz USB 48MHz D PCI 33MHz REF 14MHz Page : 2 3V_591 Page : 21 +3V_S5 1 GDDR2 Page : 27 PCIE Yonah / Merom GDDR2 NVIDIA G72M-V
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100/133MHz
100MHz
96MHz
48MHz
33MHz
14MHz
ICS954310
CH7307
G72M-V
23X23
DA0ZR1
NFW22
Pr1363
FW04
PC87541v
88e8038
quanta
IR 334
foxconn
14 pin JTAG CONNECTOR
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OZ8118
Abstract: RT8204 DABD3UB18C0 G784P81U MCP67 QUANTA power on sequence GDDR2-BGA84 quanta foxconn QUANTA power sequence
Text: 5 4 3 2 1 GDDR2 PCI-E x16 D GDDR2 ATi PAGE 8 CH-A M86-M C GDDR2 GDDR2 FCBGA 880pin VGA CONNECTOR D PAGE 8 TV GDDR2 C CRT GDDR2 PAGE 9 CH-B TMDS GDDR2 LVDS GDDR2 PAGE 3, 4, 5, 6, 7, 10 PAGE 9 +5V B B +3.3V VIN VGA CORE POWER OZ8118 PAGE 11 VIN 1.8V / 1.1V POWER
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M86-M
880pin
OZ8118
RT8204
TXN15
TXP15
TXN14
TXP14
TXN13
TXP13
DABD3UB18C0
G784P81U
MCP67
QUANTA power on sequence
GDDR2-BGA84
quanta
foxconn
QUANTA power sequence
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ITE 8511
Abstract: ITE8511 C6290 U606-3 C-6533 C6384 asus u6042 B C6113 U6048
Text: 5 4 3 2 1 T76S: MEROM/965-PM/ICH8-M/NB8M-SE BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T GDDR2 VRAM*4 16X16 D Merom PAGE 21 D 478B uFCPGA FAN + Thermal sensor 84 FBGA PAGE 51 PAGE 3,4,5 PAGE 36 FSB 800 MHz LVDS nVIDIA NB8M-SE PAGE 34 CRT PAGE 35 533 BGA POWER
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MEROM/965-PM/ICH8-M/NB8M-SE
16X16)
ICS9LPR363CGLF-T
965PM
667MHz
RTL8111B
ALC660D
PMN45EN
FDW2501
MAX8632
ITE 8511
ITE8511
C6290
U606-3
C-6533
C6384
asus
u6042 B
C6113
U6048
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gddr5
Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N51163QC-ZC
512Mbit
gddr5
K4N51163QC-ZC
K4N51163QC-ZC25
K4N51163QC-ZC2A
K4N51163QC-ZC33
K4N51163QC-ZC36
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4mx32
Abstract: GDDR
Text: Date : May, 2003 Application Application Note Note Title : x32 GDDR/GDDR2 SDRAM Operation at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San24, Nongseo-Ree, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea R.O.K
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San24,
800Mbps
8Mx32
4Mx32
GDDR
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k4n1g164qe-hc20
Abstract: k4n1g164qe
Text: 1Gb gDDR2 SDRAM K4N1G164QE 1Gbit gDDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant Revision 1.2 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4N1G164QE
84FBGA
k4n1g164qe-hc20
k4n1g164qe
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gddr3
Abstract: GDDR2
Text: Date : Oct , 2003 Revision 0.0 Application Application Note Note Key Difference Between GDDR2 and GDDR3 Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San24, Nongseo-Ree, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea(R.O.K)
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San24,
gddr3
GDDR2
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K4N56163QI-ZC25
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QI 256Mbit gDDR2 SDRAM Revision 1.1 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QI
256Mbit
K4N56163QI-ZC25
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HY5PS121621BFP
Abstract: HY5PS121621B HY5PS121621BFP-2
Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
84Ball
HY5PS121621BFP
HY5PS121621B
HY5PS121621BFP-2
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Untitled
Abstract: No abstract text available
Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS121621BFP
512Mb
32Mx16)
1HY5PS121621BFP
300Mhz
400Mhz
500MHz
450MHz/500MHz)
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HY5PS561621AFP-33
Abstract: No abstract text available
Text: HY5PS561621AF P 256Mb(16Mx16) gDDR2 SDRAM HY5PS561621AF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5PS561621AF
256Mb
16Mx16)
1HY5PS561621AF
300Mhz
84Ball
HY5PS561621AFP-33
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Untitled
Abstract: No abstract text available
Text: 512M gDDR2 SDRAM K4N51163QE 512Mbit gDDR2 SDRAM Revision 1.3 August 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N51163QE
512Mbit
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K4N56163QF-GC37
Abstract: K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QF-GC
256Mbit
K4N56163QF-GC37
K4N56163QF-ZC
gddr5
JESD51-2
K4N56163QF-GC
K4N56163QF-GC25
K4N56163QF-GC30
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gDDR2-800
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.8 May 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QF-GC
256Mbit
gDDR2-800
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k4n56163qg ZC25
Abstract: ZC33 K4N56163QG
Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.2 July 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QG
256Mbit
k4n56163qg ZC25
ZC33
K4N56163QG
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Untitled
Abstract: No abstract text available
Text: 1Gb gDDR2 SDRAM K4N1G164QE 1Gbit gDDR2 SDRAM 84FBGA with Lead-Free & Halogen-Free RoHS compliant Revision 1.1 November 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4N1G164QE
84FBGA
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Untitled
Abstract: No abstract text available
Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.4 December 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QG
256Mbit
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K4N51163QZ-HC25
Abstract: k4n51163qz K4N51163QZ-HC20
Text: 512M gDDR2 SDRAM K4N51163QZ 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 1.3 September 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
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K4N51163QZ
512Mbit
84FBGA
K4N51163QZ-HC25
k4n51163qz
K4N51163QZ-HC20
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GDDR5
Abstract: 96FBGA POD-15 SSTL-15 96-FBGA 170FBGA GDDR3 SDRAM 256Mb 170-FBGA 100-FBGA 136FBGA
Text: Jul.2010 Graphics Code Information Component K4XXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory K 11. "─“ 2. DRAM : 4 12. Package - gDDR2 H : 84FBGA (Halogen Free & Lead Free) B : 84FBGA (Halogen Free & Lead Free & Flip Chip)
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84FBGA
100FBGA
96FBGA
136FBGA
170FBGA
8K/64ms
8K/32ms
GDDR5
96FBGA
POD-15
SSTL-15
96-FBGA
170FBGA
GDDR3 SDRAM 256Mb
170-FBGA
100-FBGA
136FBGA
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K4N56163QI-ZC25
Abstract: K4N56163QI-ZC22 K4N56163QI-ZC2A k4n56163qizc25 K4N56163QI
Text: 256M gDDR2 SDRAM K4N56163QI 256Mbit gDDR2 SDRAM Revision 1.2 August 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N56163QI
256Mbit
K4N56163QI-ZC25
K4N56163QI-ZC22
K4N56163QI-ZC2A
k4n56163qizc25
K4N56163QI
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schematic LG TV lcd backlight inverter
Abstract: intel H61 crb schematics F3J INVERTER CABLE asus b4556 MW882J3L-P thermal diode schematic intel g41 F3J inverter Z96j
Text: 5 4 3 GDDR2 16Mx16 x4 P.28 2 CPU Option 1 CLOCK GEN YONAH MEROM 31W P.4~534W ICS 954310 Z96J P.39 D D GDDR2 16Mx16 x4 P.29 THERMAL CONTROLP.37 PSB 667MHz LCDP.33 PCI-E X16 ATI M56P CRTP.32 TV-OUT P.24~30 P.35 NORTH BRIDGE DDR2 Intel 945PM DDR2 DDR2 SO-DIMM0
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16Mx16
667MHz
945PM
SLB9635
IT8510E
ALC882
schematic LG TV lcd backlight inverter
intel H61 crb schematics
F3J INVERTER CABLE
asus
b4556
MW882J3L-P
thermal diode
schematic intel g41
F3J inverter
Z96j
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