2N06L
Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
Text: *57 S G S -T H O M S O N ilLHCTIIMDe TYPE 2Nosl STD12N06L s t d i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR R DS on Id S T D 12N05L V 50 V < 0.15 a 12 A S T D 12N06L 60 V < 0.15 £2 12 A dss • T Y P IC A L R DS(on) = 0.115 £1
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STD12N06L
12N05L
12N06L
2N06L
2N06L 11
12N06L
2N06L 13
mp10
D12N06L
2N06L mos
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14N05
Abstract: BR03 TK14N GCJ4360
Text: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C
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STK14N05
STK14N06
STK14N
OT-82
OT-194
STK14N05/STK14N06
GC344
14N05
BR03
TK14N
GCJ4360
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON TYPE STD8N06 STD8N06 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V < 0.25 a 8 A . TYPICAL R DS(on) = 0.21 Cl • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C • LOW GATE CHARGE
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STD8N06
O-251)
O-252)
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 5 iL iO M iQ £ I 7 STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 . T Y P IC A L V d ss R D S(on) Id 600 V < 8a 1.9 A R D S (o n ) = 7.2 Q m ± 30V G A TE TO S O U R C E V O LT A G E R ATING . . • . . 100% A V A LA N C H E TE S TE D
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STK2NA60
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2N06
Abstract: 2N05 D12N05
Text: *57 s td i 2N05 SGS-THOMSON i L i O M K I S T D 1 2 N 0 6 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R DS on Id STD12N05 50 V < 0.15 a 12 A STD12N06 60 V < 0.15 ß 12 A • . . ■ ■ . ■ ■ TYPICAL RDS(on) = 0.1 £2 AVALANCHE RUGGED TECHNOLOGY
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STD12N05
STD12N06
O-251)
O-252)
O-251
O-252
2N06
2N05
D12N05
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON STD6N10 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE STD 6N 10 V dss R D S o n Id 100 V < 0 .4 5 Ü 6 A . • . . • . . ■ TYPICAL R Ds(on) = 0.35 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STD6N10
O-251)
O-252)
O-251
O-252
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2N06L
Abstract: k12n06l K12N05 2N06L 13 STK12N
Text: *57 S G S -T H O M S O N ilLHCTIIMDe 2 N osl STK12N06L s t k i N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STK12N05L STK12N06L V dss R DS on Id 50 V < 0.15 a < 0.15 a 12 A 12 A 60 V • . . ■ ■ . ■ TYPICAL RDS(on) = 0.115 £2
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STK12N06L
STK12N05L
2N06L
k12n06l
K12N05
2N06L 13
STK12N
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