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    GA200SA60U Price and Stock

    Vishay Semiconductors GA200SA60U

    IGBT MOD 600V 200A 500W SOT227B
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    DigiKey GA200SA60U 10
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    Vishay Semiconductors VS-GA200SA60UP

    IGBT MOD 600V 200A 500W SOT227
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    Quest Components VS-GA200SA60UP 1
    • 1 $25.1258
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    Vishay Intertechnologies VS-GA200SA60UP

    Single Igbt, 600V, 200A; Continuous Collector Current:200A; Collector Emitter Saturation Voltage:1.92V; Power Dissipation:500W; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Vishay VS-GA200SA60UP
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    Newark VS-GA200SA60UP Bulk 160
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    Vishay Intertechnologies GA200SA60UP

    100 A INSULATED GATE BIPOLAR TRANSISTOR (ULTRAFAST SPEED IGBT) Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA GA200SA60UP 60
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    GA200SA60U Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA200SA60U International Rectifier IGBTs - Modules, Discrete Semiconductor Products, IGBT UFAST 600V 100A SOT227 Original PDF
    GA200SA60U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    GA200SA60UPBF International Rectifier TRANS IGBT MODULE N-CH 600V 200A 4SOT-227 Original PDF

    GA200SA60U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz 08-Mar-07

    ga200sa60up

    Abstract: N-CHANNEL INSULATED GATE TYPE
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP 2002/95/EC OT-227 18-Jul-08 ga200sa60up N-CHANNEL INSULATED GATE TYPE

    e789

    Abstract: ic 3020
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 e789 ic 3020

    GA200SA60UP

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 18-Jul-08 GA200SA60UP

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA200SA60UP E78996 OT-227 OT-227electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP E78996 2002/95/EC OT-227 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA200SA60UP E78996 OT-227 30electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GA200SA60U

    Abstract: k241
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz 12-Mar-07 GA200SA60U k241

    GA200SA60U

    Abstract: No abstract text available
    Text: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF -50066A GA200SA60U 20kHz r252-7105 GA200SA60U

    Untitled

    Abstract: No abstract text available
    Text: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60UP OT-227 12-Mar-07

    ga200sa60up

    Abstract: No abstract text available
    Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF I27236 GA200SA60UP 20kHz 12-Mar-07 ga200sa60up

    SOT-227 heatsink

    Abstract: GA200SA60U
    Text: PD -5.066 PRELIMINARY GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA200SA60U 20kHz SOT-227 heatsink GA200SA60U

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    HEXFET

    Abstract: GA200TD120U GA500TD60U GA100TS60U
    Text: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999


    Original     		PDF OT-227 GA600GD25S GA125TS120U GA100TS120U GA75TS120U GA50TS120U GA250TS60U GA200TS60U GA150TS60U GA100TS60U HEXFET GA200TD120U GA500TD60U

    IRG41BC20W

    Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
    Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles


    Original     		PDF O-220 IR2130 230VAC IR2133 460VAC IR2233 IR2137/IR2171 IRG41BC20W IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor

    IC 50061

    Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
    Text: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 22 July, 1998


    Original     		PDF OT-227 GA600GD25S GA400TD25S GA500TD60U GA400TD60U A75TS60U GA250TD120U GA200TD120U GA150TD120U GA125TS120U IC 50061 FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U

    IRF 3250

    Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


    Original     		PDF EC350 G2-1B02-TT H23LTI HCTL-2016 220N60C3D G2-1A05-TT H21A1 HCPL-4506 HGTG30N60C3 G2-1A06-ST IRF 3250 IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC

    Untitled

    Abstract: No abstract text available
    Text: International lö R R ectifi 0r PD -5.066 P R E LIM IN A R Y GA200SA60U Ultra-Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR F eatu res • U ltraFast: O p tim ize d for m inim um saturation voltage V ces = 600V a nd operating freq u en cies up to 4 0 k H z in hard


    OCR Scan     		PDF GA200SA60U

    TRANSISTOR ASY 0.25 W

    Abstract: c103 a ge
    Text: PD - 5.066 International I R Rectifier GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-Fast Speed IGBT Features • U ltra F a st: O p tim ize d fo r m in im um satu ra tion vo lta g e a n d op e ra tin g fre q u e n cie s up to 4 0 kH z in hard sw itch ing , > 2 0 0 kH z in re so n a n t m ode


    OCR Scan     		PDF GA200SA60U C-102 C-103 TRANSISTOR ASY 0.25 W c103 a ge