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    GA10JT12 Search Results

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    GA10JT12 Price and Stock

    GeneSic Semiconductor Inc GA10JT12-263

    TRANS SJT 1200V 25A
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    DigiKey GA10JT12-263 Tube 1,250
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    Newark GA10JT12-263 Bulk 1,250
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    NAC GA10JT12-263 50
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    GeneSic Semiconductor Inc GA10JT12-247

    TRANS SJT 1200V 10A TO247AB
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    DigiKey GA10JT12-247 Tube 870
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    NAC GA10JT12-247 870
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    Navitas Semiconductor GA10JT12-263

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    Onlinecomponents.com GA10JT12-263
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    GeneSic Semiconductor Inc GA10JT12-CAL

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    NAC GA10JT12-CAL 1
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    GA10JT12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA10JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1.2KV 10A Original PDF
    GA10JT12-263 GeneSiC Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS SJT 1200V 25A Original PDF

    GA10JT12 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) Features •        = = = = 1200 V 120 mΩ 25 A 80 Package 250 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


    Original     		PDF GA10JT12-CAL GA10JT12 00E-47 26E-28 39E-12 1373E-12

    GA10JT12

    Abstract: No abstract text available
    Text: GA10JT12-263 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-263. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-JUN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA10JT12-263 GA10JT12-263. 05-JUN-2015 GA10JT12 833E-48 073E-26 39E-12 1373E-12

    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-CAL Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.0 $ * $Date: 12-SEP-2014 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA10JT12-CAL GA10JT12-CAL. 12-SEP-2014 GA10JT12 00EARRANTY 00E-47 26E-28 39E-12 1373E-12

    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA10JT12-263 O-263-7L) GA10JT12 833E-48 073E-26 39E-12 1373E-12

    hcpl 322j

    Abstract: hcpl-322j HCPL316
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 hcpl 322j hcpl-322j HCPL316

    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-247 Section VIII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA10JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.1 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.


    Original     		PDF GA10JT12-247 GA10JT12-247. 29-JAN-2015 GA10JT12 833E-48 073E-26 39E-12 1373E-12

    ga10jt12

    Abstract: No abstract text available
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original     		PDF GA10JT12-247 O-247 GA10JT12 833E-48 073E-26 39E-12 1373E-12

    IXDD614

    Abstract: No abstract text available
    Text: GA10JT12-263 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10JT12-263 O-263 GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3 IXDD614

    Untitled

    Abstract: No abstract text available
    Text: GA10JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original     		PDF GA10JT12-247 O-247AB GA10JT12 00E-47 26E-28 50E-10 11E-9 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original     		PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182