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    GeneSic Semiconductor Inc GA03JT12-247

    TRANS SJT 1200V 3A TO247AB
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    DigiKey GA03JT12-247 Tube 1,260
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    NAC GA03JT12-247 30
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    GA03JT12 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GA03JT12-247 GeneSiC Semiconductor FETs - Single, Discrete Semiconductor Products, TRANS SJT 1200V 3A TO-247AB Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original
    PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA03JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.2 $ * $Date: 26-AUG-2014 $ * * GeneSiC Semiconductor Inc.


    Original
    PDF GA03JT12-247 GA03JT12-247. 26-AUG-2014 GA03JT12 01E-49 00E-27 37E-10 97E-10

    Untitled

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3

    IXDD614

    Abstract: No abstract text available
    Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch


    Original
    PDF GA03JT12-247 O-247AB GA03JT12 01E-49 00E-27 37E-10 97E-10 00E-3 IXDD614

    Untitled

    Abstract: No abstract text available
    Text: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards


    Original
    PDF GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182