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    G3N60C Search Results

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    Harris Semiconductor G3N60C

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    ComSIT USA G3N60C 66
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    Intersil Corporation G3N60C3D

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    ComSIT USA G3N60C3D 43
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    G3N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G3N60C3

    Abstract: G3N60 G3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
    Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3DS HGT1S3N60C3DS 150oC. TA49113. TA49055. G3N60C3 G3N60 G3N60C3D HGT1S3N60C3DS9A HGTP3N60C3D

    HGTD3N60C3S9A

    Abstract: HGTD3N60C3 HGTD3N60C3S LD26 RHRD460
    Text: HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBTs June 1997 Features Description • 6A, 600V at TC = 25oC The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		PDF HGTD3N60C3, HGTD3N60C3S HGTD3N60C3 HGTD3N60C3S 150oC. 130ns 150oC 1-800-4-HARRIS HGTD3N60C3S9A LD26 RHRD460

    g3n60c3d

    Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
    Text: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns 150oC O-262AA g3n60c3d HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D

    G3N60C

    Abstract: ns802 HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 LD26 RHRD460 TB334 N-Channel IGBT
    Text: HGTD3N60C3S, HGTP3N60C3 Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 150oC. G3N60C ns802 HGTD3N60C3S9A LD26 RHRD460 TB334 N-Channel IGBT

    G3N60C3D

    Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
    Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3DS HGT1S3N60C3DS 150oC. TA49113. TA49055. G3N60C3D HGT1S3N60C3DS9A HGTP3N60C3D

    ns802

    Abstract: HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 RHRD460 TB334 transistor TO-220AB
    Text: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 150oC. ns802 HGTD3N60C3S9A RHRD460 TB334 transistor TO-220AB

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g3n60c3d

    Abstract: HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49055 G3N60C3
    Text: HGTP3N60C3D, HGT1S3N60C3DS Data Sheet December 2001 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3DS HGT1S3N60C3DS 150oC. TA49113. TA49055. 130ns g3n60c3d HGT1S3N60C3DS9A HGTP3N60C3D TA49055 G3N60C3

    G3N60C

    Abstract: HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 LD26 RHRD460 TB334 ns802
    Text: HGTD3N60C3S, HGTP3N60C3 Data Sheet January 2000 File Number 4139.5 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		PDF HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 150oC. G3N60C HGTD3N60C3S9A LD26 RHRD460 TB334 ns802

    G3N60C3D

    Abstract: G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS Semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns 150oC O-262AA G3N60C3D G3N60C3 HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D TA49119 G3N60

    HGTD3N60C3

    Abstract: HGTD3N60C3S HGTD3N60C3S9A LD26 RHRD460 G3N60C
    Text: HGTD3N60C3, HGTD3N60C3S S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT June 1996 Features • • • • • Packaging 6A, 600V at TC = +25oC 600V Switching SOA Capability Typical Fall Time - 130ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		PDF HGTD3N60C3, HGTD3N60C3S 130ns 150oC O-251AA HGTD3N60C3 HGTD3N60C3S 150oC. O-252AA 1-800-4-HARRIS HGTD3N60C3S9A LD26 RHRD460 G3N60C

    g3n60c3d

    Abstract: HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = 25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns 150oC O-262AA g3n60c3d HGTP3N60C3D HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A

    G3N60C

    Abstract: C110 HGTD3N60C3S HGTD3N60C3S9A HGTP3N60C3 TB334
    Text: interrii HGTD3N60C3S, HGTP3N60C3 J a n u a ry . m Data Sheet 6A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		PDF HGTD3N60C3S, HGTP3N60C3 HGTD3N60C3S HGTP3N60C3 TA49113. G3N60C C110 HGTD3N60C3S9A TB334

    Untitled

    Abstract: No abstract text available
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns O-262AA 1-800-4-HARRIS

    3N60C3D

    Abstract: g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3
    Text: HARRIS HGTP3N60C3D , HGT1S3N60C3D, HGT1S3N60C3DS S E M I C O N D U C T O R 6A , 6 0 0 V , U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t Di o d es Features Packaging JEDEC TO-22QAB • 6 A, 600V at Tc = 25 °C


    OCR Scan     		PDF HGTP3N60C3D HGT1S3N60C3D, HGT1S3N60C3DS 130ns O-22QAB HGTP3N60C3D, HGT1S3N60C3DS -800-4-H 3N60C3D g3n60c3d 3n60c3 3n60c transistor TE 901 equivalent Zener Diode LT 432 S3N60C3

    hg 3a 1004

    Abstract: BT 139 F applications note
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS -220AB ay1996 130ns HGT1S3N60C3DS 1-800-4-HARRIS hg 3a 1004 BT 139 F applications note

    g3n60c3d

    Abstract: SE101-1 HGT1S3N60C3DS9A HGTP3N60C3D HGT1S3N60C3DS G3N60C3
    Text: in t e HGTP3N60C3D, HGT1S3N60C3DS r r ii J a n u a ry . m Data Sheet 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTP3N60C3D, and H G T1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3DS HGT1S3N60C3DS TA49113. TA49055. g3n60c3d SE101-1 HGT1S3N60C3DS9A HGTP3N60C3D G3N60C3