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    FSGJ160 Search Results

    FSGJ160 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSGJ160D1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF
    FSGJ160R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF
    FSGJ160R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF

    FSGJ160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSGJ160D1

    Abstract: FSGJ160R4 FSGJ160 2E12 FSGJ160R3 Rad Hard in Fairchild for MOSFET
    Text: FSGJ160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGJ160R FSGJ160R FSGJ160D1 FSGJ160R4 FSGJ160 2E12 FSGJ160R3 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSGJ160D1 FSGJ160R3 FSGJ160R4 4A200
    Text: FSGJ160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle GL R bdin dd, GR isCha l wer STs) tho yds rd poon, mitor, diadd, GR is- Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or


    Original     		PDF FSGJ160R FSGJ160R 2E12 FSGJ160D1 FSGJ160R3 FSGJ160R4 4A200

    Untitled

    Abstract: No abstract text available
    Text: FSGJ160R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both


    Original     		PDF FSGJ160R

    2N7509

    Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 3 January 2009. INCH-POUND MIL-PRF-19500/687B 3 October 2008 SUPERSEDING MIL-PRF-19500/687A 12 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND


    Original     		PDF MIL-PRF-19500/687B MIL-PRF-19500/687A 2N7509, 2N7510, 2N7511, MIL-PRF-19500. 2N7509 transistor 1020 2N7510 FSGJ264 FSGJ160