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    FQD10N20 Search Results

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    FQD10N20 Price and Stock

    onsemi FQD10N20TF

    MOSFET N-CH 200V 7.6A DPAK
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    DigiKey FQD10N20TF Reel 2,000
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    onsemi FQD10N20TM

    MOSFET N-CH 200V 7.6A DPAK
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    DigiKey FQD10N20TM Reel 2,500
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    onsemi FQD10N20CTF

    MOSFET N-CH 200V 7.8A DPAK
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    DigiKey FQD10N20CTF Reel 2,000
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    onsemi FQD10N20LTF

    MOSFET N-CH 200V 7.6A TO252
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    onsemi FQD10N20LTM

    MOSFET N-CH 200V 7.6A TO252
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    FQD10N20LTM Digi-Reel 1
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    FQD10N20LTM Cut Tape
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    Newark FQD10N20LTM Cut Tape 1
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    Quest Components FQD10N20LTM 120
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    FQD10N20 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD10N20 Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    FQD10N20C Fairchild Semiconductor Original PDF
    FQD10N20CTF Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQD10N20CTF_NL Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQD10N20CTM Fairchild Semiconductor 200V N-Channel Advance Q-FET C-Series Original PDF
    FQD10N20CTM_F080 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.8A DPAK Original PDF
    FQD10N20L Fairchild Semiconductor 200 V Logic N-Channel MOSFET Original PDF
    FQD10N20LTF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.6A DPAK Original PDF
    FQD10N20LTF Fairchild Semiconductor 200V N-Channel Logic Level QFET Original PDF
    FQD10N20LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.6A DPAK Original PDF
    FQD10N20LTM Fairchild Semiconductor 200V N-Channel Logic Level QFET Original PDF
    FQD10N20TF Fairchild Semiconductor 200V N-Channel QFET Original PDF
    FQD10N20TM Fairchild Semiconductor 200V N-Channel QFET Original PDF

    FQD10N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10n20c

    Abstract: 10n20
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C swi000 FQD10N20CTF FQD10N20CTM 10n20c 10n20

    FQU10N20C

    Abstract: No abstract text available
    Text: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L FQU10N20LTU O-251

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L FQD10N20LTM FQD10N20LTF O-252

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20L / FQU10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD10N20, FQU10N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.


    Original     		PDF FQD10N20, FQU10N20 FQD10N20

    FQD10N20C

    Abstract: FQU10N20C
    Text: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20L / FQU10N20L May 2000 QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD10N20L FQU10N20L

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C

    FQD10N20L

    Abstract: FQU10N20L
    Text: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L FQU10N20L

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is • produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state •


    Original     		PDF FQD10N20L

    FQD10N20C

    Abstract: FQU10N20C
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 mΩ Features Description • 7.8 A, 200 V, RDS on = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		PDF FQD10N20C FQU10N20C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD10N20L / FQU10N20L TM 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD10N20L FQU10N20L

    10n20

    Abstract: 10n20c FQU10N20C
    Text: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD10N20C FQU10N20C FQU10N20C FQU10N20CTU 10n20 10n20c

    Common rail piezo injector driver

    Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


    Original     		PDF

    uc3844 schematic diagram 24v dc dc

    Abstract: 24v dc power supply with uc3844 UC3844 flyback application note PowerDsine 3001 schematic uc3844 pcb design on uc3844 ,uc3844 schematic diagram 24v dc dc bzx84c5v1 on semi UC3844 flyback schematic diagram 48V power supply Poe
    Text: POE PD POWER SUPPLY EVALUATION BOARD USER GUIDE Triple Isolated Power Supply for POE Powered Device Application Using UC3844 and LX1752 Evaluation Board Copyright 2008 Rev. 0.0, 2008-12-04 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570


    Original     		PDF UC3844 LX1752 uc3844 schematic diagram 24v dc dc 24v dc power supply with uc3844 UC3844 flyback application note PowerDsine 3001 schematic uc3844 pcb design on uc3844 ,uc3844 schematic diagram 24v dc dc bzx84c5v1 on semi UC3844 flyback schematic diagram 48V power supply Poe

    SS*2n60b

    Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
    Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031


    Original     		PDF O-252 O-252 FDD3706 FDD6512A FDD6530A RFD20N03SM FDD6676 ISL9N306AD3ST FDD6672A FDD66 SS*2n60b FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    8205 mosfet

    Abstract: DT 8210 IC Amp. mosfet 1000 watt p 818 opto P-Channel Depletion Mosfets single phase transformer design MIC9130 depletion MOSFET n mosfet depletion 1A sink Si4800DY
    Text: MIC9130 Micrel, Inc. MIC9130 High-Voltage, High-Speed Telecom DC-to-DC Controller General Description Features The MIC9130 is a current-mode PWM controller that efficiently converts –48V telecom voltages to logic levels. The MIC9130 features a high voltage start-up circuit that allows the device to


    Original     		PDF MIC9130 MIC9130 sub-25ns M9999-040805 8205 mosfet DT 8210 IC Amp. mosfet 1000 watt p 818 opto P-Channel Depletion Mosfets single phase transformer design depletion MOSFET n mosfet depletion 1A sink Si4800DY

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    sem 304

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD10N20, FQU10N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.


    OCR Scan     		PDF FQD10N20, FQU10N20 sem 304