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    FQB6N90 Price and Stock

    onsemi FQB6N90TM_AM002

    MOSFET N-CH 900V 5.8A D2PAK
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    DigiKey FQB6N90TM_AM002 Reel
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    Fairchild Semiconductor Corporation FQB6N90TM

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    Bristol Electronics FQB6N90TM 1,328
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    ComSIT USA FQB6N90TM 800
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    Others FQB6N90TM

    AVAILABLE EU
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    ComSIT USA FQB6N90TM 61,600
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    FQB6N90 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB6N90 Fairchild Semiconductor 900 V N-Channel MOSFET Original PDF
    FQB6N90 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQB6N90TM Fairchild Semiconductor 900V N-Channel QFET Original PDF
    FQB6N90TM_AM002 Fairchild Semiconductor 900V N-Channel QFET Original PDF

    FQB6N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N90, FQI6N90 FEATURES BVDSS = 900V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.


    Original     		PDF FQB6N90, FQI6N90 FQB6N90

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB6N90 FQI6N90 FQB6N90TM O-263

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB6N90 FQI6N90 FQI6N90TU O-262 FQI6N90

    FQB6N90

    Abstract: FQI6N90
    Text: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB6N90 FQI6N90 FQI6N90

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    FQB27N25

    Abstract: FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L
    Text: Discrete MOSFET TO-263 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-263(D2PAK) N-Channel ISL9N302AS3ST 30 Single 0.0023 0.0033 - - 110 75 345 FDB8030L 30 Single 0.0035


    Original     		PDF O-263 O-263 ISL9N302AS3ST FDB8030L ISL9N303AS3ST FDB7045L ISL9N304AS3ST FDB6676 FDB6670AL 30VDS FQB27N25 FQB46N15 FDB2532 FQB27P06 FDB6644 FDB6670AL FDB6676 FDB7030L FDB7042L FDB7045L

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N90, FQI6N90 FEATURES BVDSS = 900V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ.


    OCR Scan     		PDF FQB6N90, FQI6N90 D2PAK/TO-263 D2PAK/TO-263

    FQB6N90

    Abstract: FQI6N90
    Text: QFET N-CHANNEL FQB6N90, FQI6N90 FEATURES BV qss = 900V Advanced New Design R DS ON = 1 -9 i2 Avalanche Rugged Technology lD = 5.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 40nC (Typ.)


    OCR Scan     		PDF FQB6N90, FQI6N90 D2PAK/TO-263 PAK/TO-263 FQB6N90 FQI6N90