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    Untitled

    Abstract: No abstract text available
    Text: BSE D • flS3b320 G01b72? 5 H S I P Si-N Channel MOS FET Triode _ S I E M E N S / SPCLi BF 543 S E M IC O N D S T -2 \~ 2 £ ~ Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / d s s = 4 mA, gts = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF flS3b320 G01b72? Q62702-F1230 OT-23 23b32Ã QDlh730 Q01b731 -022s

    Untitled

    Abstract: No abstract text available
    Text: 32E D • ÛE3b32G O Q lb T b b ISIP PNP Silicon High-Voltage Transistors BF 721; BF 723 _ SIEMENS/ SPCLi SEMICONDS _ r - s 3 - \ 7 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		PDF E3b32G Q62702 OT-223 Q627Q2 flS3b320 T-33-17

    Untitled

    Abstract: No abstract text available
    Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 023b3SG 62702-F1 OT-143 -J250