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    Text: BSE D • flS3b320 G01b72? 5 H S I P Si-N Channel MOS FET Triode _ S I E M E N S / SPCLi BF 543 S E M IC O N D S T -2 \~ 2 £ ~ Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / d s s = 4 mA, gts = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution!


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    PDF flS3b320 G01b72? Q62702-F1230 OT-23 23b32Ã QDlh730 Q01b731 -022s