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    FLM0910 Price and Stock

    Bimba Manufacturing Company BFLM-0910-DW

    Cylinder, O.L., Block Front And Magnet Std; 1-1/16In Bore; Stroke: 10In; Std Fr | Bimba BFLM-0910-DW
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    RS BFLM-0910-DW Bulk 5 Weeks 1
    • 1 $368.3
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    Bimba Manufacturing Company BFLM-0910-DXPW

    Cylinder, O.L., Block Front And Magnet Std; 1-1/16In Bore; Stroke: 10In; Univ, W | Bimba BFLM-0910-DXPW
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    RS BFLM-0910-DXPW Bulk 5 Weeks 1
    • 1 $380.1
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    Bimba Manufacturing Company BFLM-0910-DT2W

    Cylinder, O.L., Block Front And Magnet Std; 1-1/16In Bore; Stroke: 10In; Std Fr | Bimba BFLM-0910-DT2W
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    • 1 $376
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    Bimba Manufacturing Company BFLM-0910-DWEE2

    Cylinder, O.L., Block Front And Magnet Std; 1-1/16In Bore; Stroke: 10In; Std Fr | Bimba BFLM-0910-DWEE2
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    • 1 $374.25
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    Bimba Manufacturing Company BFLM-0910-DXPBVW

    Cylinder, O.L., Block Front And Magnet Std; 1-1/16In Bore; Stroke: 10In; Univ, B | Bimba BFLM-0910-DXPBVW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS BFLM-0910-DXPBVW Bulk 5 Weeks 1
    • 1 $433
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    FLM0910 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLM0910-12F Fujitsu MOSFET, X-Band Internally Matched FET Original PDF
    FLM0910-15F Eudyna Devices X-Band Internally Matched FET Original PDF
    FLM0910-2 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM0910-2 Unknown FET Data Book Scan PDF
    FLM0910-25F Eudyna Devices X-Band Internally Matched FET Original PDF
    FLM0910-25F Fujitsu X, Ku-Band Internally Matched FET Original PDF
    FLM0910-25F-E1 Fujitsu Original PDF
    FLM0910-3F Eudyna Devices X, Ku-Band Internally Matched FET Original PDF
    FLM0910-3F Fujitsu FET, P Channel, ID 2.1 A Original PDF
    FLM0910-4C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM0910-4C Unknown FET Data Book Scan PDF
    FLM0910-4F Eudyna Devices X, Ku-Band Internally Matched FET Original PDF
    FLM0910-4F Fujitsu FET, P Channel, ID 2.6 A Original PDF
    FLM0910-4F-E1 Fujitsu FET: P Channel: ID 2.6 A Original PDF
    FLM0910-8C Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FLM0910-8C Unknown FET Data Book Scan PDF
    FLM0910-8F Eudyna Devices X, Ku-Band Internally Matched FET Original PDF
    FLM0910-8F Fujitsu FET, P Channel, ID 5.2 A Original PDF
    FLM0910-8F-E1 Fujitsu FET: P Channel: ID 5.2 A Original PDF

    FLM0910 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-8F -46dBc FLM0910-8F

    FLM0910

    Abstract: No abstract text available
    Text: FLM0910-15F X-Band Internally Matched FET FEATURES •High Output Power: P1dB=42.0dBm Typ. •High Gain: G1dB=7.5dB(Typ.) •High PAE: ηadd=32%(Typ.) •Broad Band: 9.5 to10.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-15F 50ohm FLM0910-15F 50ohm 25deg FLM0910

    FLM0910-25F

    Abstract: 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz
    Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz

    FLM0910-3F

    Abstract: 46dBc
    Text: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-3F -46dBc FLM0910-3F 46dBc

    FLM0910-4F

    Abstract: No abstract text available
    Text: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-4F -46dBc FLM0910-4F

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-4F -46dBc FLM0910-4F

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-3F -46dBc FLM0910-3F

    9.5-10.5GHz

    Abstract: No abstract text available
    Text: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F FCSI0202M200 9.5-10.5GHz

    95GHz

    Abstract: No abstract text available
    Text: FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-12F FLM0910-12F 95GHz

    2657 FET

    Abstract: No abstract text available
    Text: FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM0910-8F -46dBc FLM0910-8F 15afety, FCSI0499M200 2657 FET

    FLM0910-3F

    Abstract: No abstract text available
    Text: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-3F -46dBc FLM0910-3F FCSI0499M200

    FLM0910-8F

    Abstract: 2657 FET
    Text: FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-8F -46dBc FLM0910-8F FCSI0499M200 2657 FET

    ED-4701

    Abstract: FLM0910-12F
    Text: FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-12F FLM0910-12F ED-4701

    ED-4701

    Abstract: FLM0910-25F
    Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION


    Original     		PDF FLM0910-25F 44dBm FLM0910-25F ED-4701

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM0910-3F -46dBc FLM0910-3F 15afety, FCSI0499M200

    FLM0910-4F

    Abstract: No abstract text available
    Text: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM0910-4F -46dBc FLM0910-4F FCSI0499M200

    FLM0910-8C

    Abstract: No abstract text available
    Text: FLM0910-8C Internally Mate lied Power GaAs F E T s ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 42.8 w -65 to +175 °c 175 °c Total Power Dissipation


    OCR Scan     		PDF FLM0910-8C 30dBm 28dBm 25dBm FLM0910-8C

    FLM0910-4F

    Abstract: No abstract text available
    Text: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: r!add = 29% (Typ.) • Low IM 3 = -46dBc@Po = 25.5dBm • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM0910-4F -46dBc FLM0910-4F FCSI0499M200

    FLM0910-8C

    Abstract: i80m
    Text: FLM0910-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM0910-8C FLM0910-8C i80m

    FLM0910-4C

    Abstract: No abstract text available
    Text: FLM0910-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 36dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed


    OCR Scan     		PDF FLM0910-4C 36dBm 0910-4C FLM0910-4C

    FLM09I0-2

    Abstract: No abstract text available
    Text: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed


    OCR Scan     		PDF FLM0910-2 FLM09I0-2 FLM09I0-2

    FLM0910-4C

    Abstract: FLM0910
    Text: FLM0910-4C Fuffrsu Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ. • High Gain: G -j^B = 7.5dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed


    OCR Scan     		PDF FLM0910-4C 36dBm FLM0910-4C 1100mA FLM0910

    Untitled

    Abstract: No abstract text available
    Text: FLM0910-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed


    OCR Scan     		PDF FLM0910-8C FLM0910-8C

    Untitled

    Abstract: No abstract text available
    Text: INTERNALLY MATCHED POWER GaAs FETs X,Ku-BAND Electrical Characteristics (Ta = 25°C) PidB TYP. (dB) GtdB TYP. (dB) T)add TYP. (dB) f VDS id s (GHz) FLM8596-4C 36.0 7.5 30 FLM8596-8C 38.5 6.5 FLM0910-2 33.5 FLM0910-4C Part Number Rth (V) (mA) TYP. (°C/W)


    OCR Scan     		PDF FLM8596-4C FLM8596-8C FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-2 FLM1011-4C FLM1011-8C FLM1213-4C FLM1213-8C