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FUJITSU Limited FLL55MK Electronic Component
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ComSIT USA	FLL55MK		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLL55MK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FLL55MK Abstract: FLL55 TH 2267 Text: F\|.fjVç-. FLL55MK J L-Band Medium & High Power GaAs FETs FEATURES • • • • • High Output Power: P-idg = 36.0dBm Typ. High Gain: G-j^B = 11.5dB (Typ.) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to	OCR Scan	PDF	FLL55MK FLL55MK FLL55 TH 2267
FLL55 Abstract: FLL55MK fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook Text: FLL55MK L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • • • • High Gain: G-\|dB = 11 -5clB (TyP) High PAE: riadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL55MK is a Power GaAs FET that is specifically designed to	OCR Scan	PDF	FLL55MK FLL55MK FLL55 fujitsu l-band power fets fujitsu gaas fet L-band fujitsu databook
FLL55 Abstract: 4030p Text: FLL55MK L-Band Medium & High Power GaAs / /:7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 21.4 w Total Power Dissipation pt Tc = 25°C Storage Temperature	OCR Scan	PDF	FLL55MK FLL55 4030p
FLL55 Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.	OCR Scan	PDF	FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL55 FLL101ME FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	PDF
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	PDF	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK