FLC253MH6 Search Results

FLC253MH6 Price and Stock

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FUJITSU Limited FLC253MH-6 TRANSISTOR,MESFET,N-CHAN,15V V(BR)DSS,SOT-437AVAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLC253MH-6		144			1 $139.62 10 $139.62 100 $104.715 1000 $104.715 10000 $104.715	Buy Now
Fuji Electric Co Ltd FLC253MH6 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	FLC253MH6		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FLC253MH6 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLC253MH-6		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
FLC253MH-6		Unknown	FET Data Book		Scan	PDF

FLC253MH6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FLC253MH-6 Abstract: No abstract text available Text: FLC253MH-6 C -tìa n d Power ìaA s FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 15 w Total Power Dissipation Pt Tc = 25°C Storage Temperature Tstg	OCR Scan	PDF	FLC253MH-6 Volt26 FLC253MH-6
FLC253MH-6 Abstract: No abstract text available Text: F, , FLC253MH-6 J C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|<jB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-6 is a power GaAs FET that is designed for general	OCR Scan	PDF	FLC253MH-6 FLC253MH-6
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	PDF
FLC253MH-6 Abstract: FLC253MH6 FLC253 Text: FLC253MH-6 fujTtsu C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-\|dB = 34.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC253MH-6 is a power GaAs FET that is designed for general	OCR Scan	PDF	FLC253MH-6 FLC253MH-6 FLC253MH6 FLC253
FLC081XP Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A	OCR Scan	PDF	FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
FMC141401-02 Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1 Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking	OCR Scan	PDF
FSX52WF Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of	OCR Scan	PDF	FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK