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    MGFK38V2732

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK38V2732 1 2 .7 — 13.2G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 38V 2 73 2 is an internally impedance matched GaAs power F E T especially designed for use in 12.7 — 13.2


    OCR Scan     		PDF MGFK38V2732 MGFK38V2732 65--h175

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FK38V2732 12.7— 13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK38V 2732 is an internally impedance matched GaAs power FET especially designed fo r use in 12.7 ~ 13.2 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFK38V2732 FK38V

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p