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    FHC4 Search Results

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    FHC4 Price and Stock

    SEI Stackpole Electronics Inc HVCB2512FHC499K

    RES 499K OHM 1% 2W 2512
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    DigiKey HVCB2512FHC499K Digi-Reel 1
    • 1 $10.54
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    HVCB2512FHC499K Cut Tape 1
    • 1 $10.54
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    HVCB2512FHC499K Reel 4,000
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    Avnet Americas HVCB2512FHC499K Reel 13 Weeks 4,000
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    NAC HVCB2512FHC499K 4,000
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    Citizen Finedevice Co Ltd CSX325FHC40.000M-UT

    XTAL OSC XO 40.0000MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CSX325FHC40.000M-UT Reel 2,000
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    PennEngineering (PEM) CFHC-440-6

    Mounting Hardware STUD, CONCEALED, STAINLESS
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    Mouser Electronics CFHC-440-6 910
    • 1 $0.6
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    • 100 $0.337
    • 1000 $0.269
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    DB Roberts CFHC-440-6 1,900
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    • 100 $0.2122
    • 1000 $0.1749
    • 10000 $0.1687
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    PennEngineering (PEM) CFHC-440-4

    Mounting Hardware STUD, CONCEALED, STAINLESS
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    Mouser Electronics CFHC-440-4 376
    • 1 $0.58
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    • 100 $0.33
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    Bisco Industries CFHC-440-4 1,135
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    DB Roberts CFHC-440-4 10,103
    • 1 $0.2249
    • 10 $0.2249
    • 100 $0.2073
    • 1000 $0.1708
    • 10000 $0.165
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    PennEngineering (PEM) CFHC-440-12

    Screws & Fasteners STUD, CONCEALED, STAINLESS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CFHC-440-12
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    DB Roberts CFHC-440-12
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    FHC4 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FHC40LG Eudyna Devices Super Low Noise HEMT Original PDF
    FHC40LG Fujitsu TRANSISTOR,HEMT,N-CHAN,3.5V V(BR)DSS,10MA I(DSS),SOT-173VAR Scan PDF

    FHC4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fhc40lg

    Abstract: 18GHZ low noise hemt FH40LG
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHC40LG FH40LG 2-12GHz fhc40lg 18GHZ low noise hemt

    fhc40lg

    Abstract: 18GHZ LG 932 fujitsu hemt
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHC40LG FH40LG 2-12GHz FCSI0598M200 fhc40lg 18GHZ LG 932 fujitsu hemt

    Untitled

    Abstract: No abstract text available
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHC40LG FH40LG 2-12GHz

    08/bup 3110 transistor

    Abstract: No abstract text available
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHC40LG FHC40LG 2-12GHz 08/bup 3110 transistor

    Low Noise HEMT

    Abstract: Super low noise figure and high associated gain
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    PDF FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain

    Untitled

    Abstract: No abstract text available
    Text: ࢅຫྯ૵਌ Low Frequency Transistor FHC4672 ࢅຫྯ૵਌ Low Frequency Transistor DESCRIPTION & FEATURES 概述及特點 1 Low saturation voltage VCE sat) = 0.1V(Typ) at IC/IB =1A/50mA 2)Excellent DC current gain characteristics SOT-89 PIN ASSIGNMENT 引腳說明


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    PDF A/50mA FHC4672 OT-89 OT-89 FHC4672P FHC4672Q 100MHZ

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    FHD2391

    Abstract: FHFCX491 FHC4 FHBC869
    Text: SOT-89 NPN 三极管(SOT-89 NPN TRANSISTORS) 产品名称 DEVICE 耗散 特征 峰值 正向 击穿电压 击穿电压 击穿电压 反向漏电流 反向漏电流 功率 频率 电流 电流 V BR CBO V(BR)CEO V(BR) EBO ICBO IEBO Ptot fT ICM IC (W) (MHz)


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    PDF OT-89 FHBC868 FHBC868-16 FHBC868-25 FHBCV29 FHBCV49 FHFCX591A FHFCX593 FHFCX596 FHD2391 FHFCX491 FHC4 FHBC869

    fujitsu hemt

    Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
    Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability


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    PDF FH40LG 2-12GHz FHC40LG FCSI0598M200 fujitsu hemt fujitsu transistor HEMT fhc40lg 280AM low noise hemt

    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


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    PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


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    PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


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    s parameters 4ghz

    Abstract: S2V 80
    Text: F HC 40 LG Low Noise HEMT ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage vgs -3.0 V Total Power Dissipation Ptot 290 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature


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    PDF 4000Q. s parameters 4ghz S2V 80

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


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