FHB1132 Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: QOQ ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor PNP Medium Power Transistor(PNP) FHB1132 QOQ ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = -0.2V(Typ) (IC / IB =-500mA/-50mA) 2) Complements the FHD1664 3) Epitaxial planar type,	Original	-500mA/-50mA) FHD1664 FHB1132 OT-89 OT-89 FHB1132P FHB1132Q -100mA -500mA -50mA	PDF
Untitled Abstract: No abstract text available Text: NPN ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) FHD1664 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = 0.15V(Typ) (IC / IB =500mA/50mA) 2) Complements the FHB1132 3) Epitaxial planar type,	Original	500mA/50mA) FHB1132 OT-89 FHD1664 OT-89 DED1664Q FHD1664R 100mA 500mA	PDF
Untitled Abstract: No abstract text available Text: 广东肇庆风华新谷微电子有限公司广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 Medium Power Transistor FHB1132 FEATURES特征 •Low VCE sat = -0.2V (Typ.) (IC / IB = –500mA / –50mA)	Original	OT-89 FHB1132 500mA FHB1132P FHB1132Q FHB1132R -100mA -500mA -50mA 30MHz	PDF
FHD2391 Abstract: FHFCX491 FHC4 FHBC869 Text: SOT-89 NPN 三极管（SOT-89 NPN TRANSISTORS）产品名称 DEVICE 耗散特征峰值正向击穿电压击穿电压击穿电压反向漏电流反向漏电流功率频率电流电流 V BR CBO V(BR)CEO V(BR) EBO ICBO IEBO Ptot fT ICM IC (W) (MHz)	Original	OT-89 FHBC868 FHBC868-16 FHBC868-25 FHBCV29 FHBCV49 FHFCX591A FHFCX593 FHFCX596 FHD2391 FHFCX491 FHC4 FHBC869	PDF