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    FERRANTI SEMICONDUCTORS Search Results

    FERRANTI SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FERRANTI SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ferranti

    Abstract: MPSA42 MPSA43 Ferranti Semiconductors
    Text: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan     		PDF MPSA42 MPSA43 O-5/39 100/iA, 20MHz ferranti MPSA43 Ferranti Semiconductors

    Ferranti Semiconductors

    Abstract: MPSA42 MPSA43 ferranti se17
    Text: MPSA42 MPSA43 FERRANTI semiconductors NPN Silicon Planar High Voltage Transistors DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan     		PDF MPSA42 MPSA43 O-5/39 MPSA43 Ferranti Semiconductors ferranti se17

    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Text: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan     		PDF FMMT-A42 FMMT-A43 FMMT-A92 FMMT-A93. OT-23 FMMT-A43 FMMT-A13 FMMT-A14 FMMT-A42R A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors

    WIMA TFM

    Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
    Text: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN


    OCR Scan     		PDF RG121JU WIMA TFM Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A

    5D marking DIODE BAS16

    Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
    Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF BAS16 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A 5D marking DIODE BAS16 Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23

    BCW70R

    Abstract: general purpose complementary transistors 1a 50v BCW71 scw71 BCW69 BCW69R BCW70 BCW72 BFQ31 5P sot23
    Text: FERRANTI semiconductors * BCW69 BCW70 PNP Silicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r lo w level, general purpose applications. Com plementary to th e BCW71 and BCW72. Encapsulated in th e popular SOT-23 package these devices


    OCR Scan     		PDF BCW69 BCW70 BCW71 BCW72. OT-23 BCW69 BCW70 FMMT5087 BCW70R general purpose complementary transistors 1a 50v scw71 BCW69R BCW72 BFQ31 5P sot23

    transistor JSW

    Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
    Text: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power


    OCR Scan     		PDF ZTX449 ZTX449 100mA 100ms transistor JSW transistor JSW 12 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26

    FMMD6050

    Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
    Text: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMD6050 OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A FMMD6050 Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47

    ZC832A

    Abstract: FMMD914 ZC830A ZC831A ZC833A ZC834A ZC835A ZC836A ZC836B ferranti
    Text: i FERRANTI semiconductors ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


    OCR Scan     		PDF ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A FMMD914 ZC834A ZC835A ZC836A ZC836B ferranti

    Diode Marking z3 SOT-23

    Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
    Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAR99 OT-23 BAR99 C9/C20 50MHz ZC830A ZC831A ZC832A Diode Marking z3 SOT-23 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99

    FMMD6050

    Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
    Text: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film


    OCR Scan     		PDF BAL99 OT-23 BAL99 C9/C20 50MHz ZC830A ZC831A ZC832A FMMD6050 E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAS16 SOT diode marking Z3 BAV74

    Untitled

    Abstract: No abstract text available
    Text: FERRANTI semiconductors M icrophone A m p lifie r For Telephone Circuits FEATURES • • • • • • • • • • • Conforms to BT Specification S 1 3 7 7 On Chip Bridge Allows Dual Supply Polarity Operation Direct Matching to ElectretTransducers


    OCR Scan     		PDF 15ohm ZN470AE ZN472E

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    BCW66

    Abstract: transistor EH sot-23 BCW65 BCW65A BCW65B BCW66F BCW67 BCW68 ferranti BCW66H
    Text: * FERRANTI semiconductors BCW65 BCW66 NPN Sil icon Planar Medium Power Transistors DESCRIPTION These devices are intended for use in medium power general purpose, switching and low noise applications. Complementary to the BCW67 and BCW68. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF BCW65 BCW66 BCW67 BCW68. OT-23 BCW66 BCW65/66, BCW65/66 transistor EH sot-23 BCW65A BCW65B BCW66F BCW68 ferranti BCW66H

    BCW60

    Abstract: transistor ad 1v hFE Group ferranti BCW60A BCW60B BCW60C BCW60D FERRANTI ZS Scans-0010382
    Text: FERRANTI k semiconductors BCW60 N P N Silicon Planar Small Signal Transistor DESCRIPTION These devices are intended fo r use in low level a m plifica ­ tion, low level sw itching and low noise applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF BCW60 OT-23 BCW60 BCW60, BCW60A BCW60B BCW60C transistor ad 1v hFE Group ferranti BCW60D FERRANTI ZS Scans-0010382

    ferranti

    Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
    Text: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching


    OCR Scan     		PDF ZTX600 ZTX601 ZTX601 100mA 100mA ferranti Scans-00107859 Ferranti Semiconductors

    PSA92

    Abstract: SE21 mpsa92 MPSA93 SE19 SE20 ferranti
    Text: 4 FERRANTI semiconductors MPSA92 MPSA 93 PNP S ilicon Planar H igh Voltage Transistors G EN ER A L D ESCRIPTIO N These plastic encapsulated, general purpose tran sis­ tors are designed for applications requiring high break­ down voltages, low saturation voltages and low


    OCR Scan     		PDF PSA92 MPSA93 T0-5/39 SE21 mpsa92 MPSA93 SE19 SE20 ferranti

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n

    marking of m7 diodes

    Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
    Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.


    OCR Scan     		PDF BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23

    marking of m7 diodes

    Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
    Text: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices


    OCR Scan     		PDF BCX19 BCX20 BCX17 BCX18. OT-23 BCX20 FMMT-A13 FMMT-A14 marking of m7 diodes ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B

    BCW29R

    Abstract: BCW30R SOT213 BCV72 BCW29 BCW30 BFQ31 BFQ31A ferranti SOT MARKING 213
    Text: FERRANTI semiconductors BCW29 BCW30 PNP S ilicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r use in low level, general purpose applications. Encapsulated in the popular SOT-23 package these devices are designed sp e cifica lly fo r use in thin and th ick film


    OCR Scan     		PDF BCW29 BCW30 OT-23 BCW29 BCW30 FMMT5087 BCW69 BCW70 BCX71G BCW29R BCW30R SOT213 BCV72 BFQ31 BFQ31A ferranti SOT MARKING 213

    ZTX650

    Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
    Text: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages


    OCR Scan     		PDF ZTX650 ZTX651 ZTX652 ZTX653 100ms 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862

    marking code AD

    Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
    Text: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan     		PDF FMMT2369A OT-23 Curre00/300 FMMT2222 FMMT2369A FMMT2369 BSV52 BSS82B BSS82C marking code AD transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20