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    FDZ208P Search Results

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    FDZ208P Price and Stock

    Rochester Electronics LLC FDZ208P

    MOSFET P-CH 30V 12.5A 30BGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDZ208P Bulk 207
    • 1 -
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    • 100 -
    • 1000 $1.46
    • 10000 $1.46
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    onsemi FDZ208P

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics FDZ208P 700
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    Quest Components FDZ208P 560
    • 1 $3.5
    • 10 $3.5
    • 100 $3.5
    • 1000 $1.4438
    • 10000 $1.4438
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    Fairchild Semiconductor Corporation FDZ208P

    12.5A, 30V, 0.0105ohm, P-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDZ208P 5,403 1
    • 1 $1.4
    • 10 $1.4
    • 100 $1.32
    • 1000 $1.19
    • 10000 $1.19
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    FDZ208P Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDZ208P Fairchild Semiconductor P-Channel 30V PowerTrench BGA MOSFET; Package: BGA (4.0x3.5); No of Pins: 18; Container: Tape & Reel Original PDF
    FDZ208P Fairchild Semiconductor P-Channel 30 Volt PowerTrench BGA MOSFET Original PDF
    FDZ208P_NL Fairchild Semiconductor P-Channel 30V PowerTrench BGA MOSFET Original PDF

    FDZ208P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDZ208P P-Channel 30 Volt PowerTrench  BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS on Battery Protection MOSFET. This


    Original     		PDF FDZ208P FDZ208P

    S2409

    Abstract: FDZ208P
    Text: FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a


    Original     		PDF FDZ208P S2409 FDZ208P

    "battery protection"

    Abstract: FDZ208P 1000 volt mosfet BGA mosfet
    Text: FDZ208P P-Channel 30 Volt PowerTrench  BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low rDS on Battery Protection MOSFET. This


    Original     		PDF FDZ208P FDZ208P "battery protection" 1000 volt mosfet BGA mosfet

    FDZ208P

    Abstract: No abstract text available
    Text: FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET


    Original     		PDF FDZ208P 42opment. FDZ208P

    Untitled

    Abstract: No abstract text available
    Text: FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET


    Original     		PDF FDZ208P

    FDZ208P

    Abstract: No abstract text available
    Text: FDZ208P P-Channel 30 Volt PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a


    Original     		PDF FDZ208P FDZ208P

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    EQUIVALENT fds4435

    Abstract: MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ
    Text: Handset Batteries May 2003 One of the key components in the battery pack protection circuit is the MOSFET switch. The current handling capability, number of cells used, and environmental constraints greatly determine the specifications for this switch. Options for ESD protection devices integrated with the


    Original     		PDF SC70-6, FDG6316P FDC6318P FDW2508P FDZ2554PZ FDZ2552P FDG6304P FDG6306P FDG6308P FDS6875 EQUIVALENT fds4435 MOSFET TSSOP-8 dual n-channel ssot-6 FDS4435 FDS6679Z MOSFET TSSOP-8 common-drain fds4435 mosfet FDS9435A/SO-8 FDW2501NZ

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    Quasi-resonant Converter for induction cooker

    Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
    Text: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8


    Original     		PDF Semiconducto01 Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter

    LSI SAS 2208

    Abstract: li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic
    Text: 1 Discrete Features Optoelectronics • Independent current limiting and shutdown controls · VTT output sources and sinks up to 3A · Tracking VDDQ /2 to within ±2% · VREF output follows VTT within ±40mV · Comprehensive New Product List · New Product Highlights


    Original     		PDF FAN5236 900mV 28-lead Power247TM, LSI SAS 2208 li shin smps 500W P channel 600v 20a IGBT optocoupler NAND THREE PHASE SOLID STATE RELAY WITH ZVS smps 500w half bridge smps igbt h-bridge igbt pwm schematics circuit 600 watt smps schematic

    ASCOM rectifier 48V

    Abstract: ASCOM rectifier wilmore 1702 ASCOM powerone 48v rectifier octal optocoupler EMERSON rectifier wilmore ELECTRONICS 48V dc poe wilmore
    Text: C O M M U N I C A T I O N S P O W E R Last Mile Powers Emerging Broadband Technologies by Linnea C. Brush T HE TELEPHONE NETWORK’S “last mile” is broadly defined as “between the local exchange and the subscriber.” This portion of the network is considered an “unnatural


    Original     		PDF

    bz71

    Abstract: BZ5.2 AZ51 FDZ201N FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553NZ Fairchild wafer fab
    Text: Date Created: 4/20/2004 Date Issued: 5/10/2004 PCN # 20040502-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0040502-A 300um 200um FDZ201N FDZ204P FDZ209N FDZ2551N FDZ2553NZ FDZ2555NZ FDZ3547N bz71 BZ5.2 AZ51 FDZ201N FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553NZ Fairchild wafer fab

    Eftec

    Abstract: FDZ197 FDZ203N FDZ206P FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ299P gem 65
    Text: Date Created: 1/29/2004 Date Issued: 3/2/2004 PCN # 20040502 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF 02XD24 FDZ197P FDZ203N FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ298N FDZ5047N FDZ201N Eftec FDZ197 FDZ203N FDZ206P FDZ208P FDZ226P FDZ2553N FDZ2554PZ FDZ299P gem 65

    FDZ201N

    Abstract: FDZ202P FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553N FDZ2553NZ FDZ2554PZ FDZ5047N
    Text: Date Created: 12/30/2003 Date Issued: 2/2/2004 PCN # 20040001 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF FDZ201N FDZ204P FDZ209N FDZ2553N FDZ2554PZ FDZ5047N FDZ202P FDZ206P FDZ2551N FDZ2553NZ FDZ201N FDZ202P FDZ204P FDZ206P FDZ209N FDZ2551N FDZ2553N FDZ2553NZ FDZ2554PZ FDZ5047N

    FDZ201N

    Abstract: FDZ202P FDZ203N FDZ204P FDZ208P FDZ2551N FDZ2552P FDZ2553N FDZ2554P FDZ5047N
    Text: Discrete MOSFET BGA RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) BGA N-Channel 2.0x2.0 mm FDZ203N 20 Single - 0.018 0.03 - 11 7.5 1.6 20 Single - 0.018 0.03 - 11 9 2 FDZ2553N


    Original     		PDF FDZ203N FDZ2553N FDZ2551N FDZ2554P FDZ2552P FDZ208P FDZ206P FDZ201N FDZ7064N FDZ5047N FDZ201N FDZ202P FDZ203N FDZ204P FDZ208P FDZ2551N FDZ2552P FDZ2553N FDZ2554P FDZ5047N

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


    Original     		PDF FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08

    IRF3713

    Abstract: IRF3713S SO8 package fairchild P-channel power mosfet SO-8 ST Microelectronics SI6434DQ 3A diode International Rectifier zener diode 1n5245b RECTIFIER DIODES ON Semiconductor MTSF3N03HD
    Text: Application Data Suggested Power MOSFET Switches for CompactPCI Hot-Swap Controller ICs N-Channel V BR DSS RDS(on) @ VGS=10V ID cont. @ 25°C Package International Rectifier 30V 35 milliohms max 5.6A Micro-8 IRF7413 International Rectifier 30V 11 milliohms max


    Original     		PDF IRF7413 Si4420DY IRL3803S RFD20N03SM HUF76129D3S RF1S70N03SM HUF76143S3S SemiMT2002. FDZ208P SUB75P03-07 IRF3713 IRF3713S SO8 package fairchild P-channel power mosfet SO-8 ST Microelectronics SI6434DQ 3A diode International Rectifier zener diode 1n5245b RECTIFIER DIODES ON Semiconductor MTSF3N03HD

    EPAC-500

    Abstract: caterpillar PFC 2.5kw fan4822 FM1233 GENSET system regenerative battery 74LVX4245 FDG901D fuel cell stationary
    Text: C O M M U N I C A T I O N S P O W E R Alternative Energy Storage and Generation By Ye Chu P RESENTLY, CRITICAL REMOTE wireline and wireless equipment are supported through power interruptions primarily by valveregulated lead-acid VRLA batteries. Though offering a low first cost, VRLA


    Original     		PDF 48Vdc, EPAC-500 caterpillar PFC 2.5kw fan4822 FM1233 GENSET system regenerative battery 74LVX4245 FDG901D fuel cell stationary