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    onsemi FDD3N40TF

    MOSFET N-CH 400V 2A DPAK
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    FDD3N40TF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD3N40TF Fairchild Semiconductor 400V N-Channel MOSFET Original PDF

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    FDD3N40TM

    Abstract: FDD3N40 FDD3N40TF FDU3N40 FDU3N40TU
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    PDF FDD3N40 FDU3N40 FDD3N40TM FDD3N40TF FDU3N40 FDU3N40TU

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    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original
    PDF FDD3N40 FDU3N40

    3n40

    Abstract: No abstract text available
    Text: TM UniFET FDD3N40 / FDU3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original
    PDF FDD3N40 FDU3N40 FDU3N40 FDD3N40TF FDD3N40TM 3n40