RFD8P06LESM9A
Abstract: f8p6le Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE KP115 bv164 45e4
Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet January 2002 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,
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RFD8P06LE,
RFD8P06LESM,
RFP8P06LE
TA49203.
175oC
RFD8P06LESM9A
f8p6le
Logic Level p-Channel Power MOSFET
RFD8P06LE
RFD8P06LESM
RFP8P06LE
KP115
bv164
45e4
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Logic Level p-Channel Power MOSFET
Abstract: 08E4 pspice ESD
Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet Title FD8 6LE D8 6LE M, P8P LE bt A, V, 00 m, D ted, gic vel, an- July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET Features These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,
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Original
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PDF
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RFD8P06LE,
RFD8P06LESM,
RFP8P06LE
TA49203.
Logic Level p-Channel Power MOSFET
08E4
pspice ESD
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RFD8P06LESM9A
Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Text: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model
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Original
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PDF
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RFD8P06LE,
RFD8P06LESM,
RFP8P06LE
TA49203.
175oC
RFD8P06LESM9A
m041
mosfet motor dc 48v
Logic Level p-Channel Power MOSFET
RFD8P06LE
RFD8P06LESM
RFP8P06LE
08E4
30e2
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RFD8P06LE
Abstract: RFD8P06LESM RFD8P06LESM9A RFP8P06LE 30e2
Text: S E M I C O N D U C T O R RFD8P06LE, RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET July 1997 Features Description • 8A, 60V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process,
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Original
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PDF
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RFD8P06LE,
RFD8P06LESM,
RFP8P06LE
1-800-4-HARRIS
RFD8P06LE
RFD8P06LESM
RFD8P06LESM9A
RFP8P06LE
30e2
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Untitled
Abstract: No abstract text available
Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,
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OCR Scan
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PDF
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RFD8P06LESM,
RFP8P06LE
0-300i2
1-800-4-HARRIS
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