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    IRFP430

    Abstract: IRF830.831
    Text: IRF830/831/832/833 IRFP430/431/432/433 N-CHANNEL POWER MOSFETS FEATURES TO -220 • L o w e r R d s ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


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