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    ET191 Price and Stock

    TE Connectivity 1SET191003R0000

    FER-SE-HT
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    DigiKey 1SET191003R0000 Box 1
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    Avnet Americas 1SET191003R0000 Bulk 17 Weeks, 3 Days 1
    • 1 $317.7138
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    Master Electronics 1SET191003R0000 3
    • 1 $446.21
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    Sager 1SET191003R0000 2 1
    • 1 $320
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    TE Connectivity 1SET191004R0000

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    DigiKey 1SET191004R0000 Box 1
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    Avnet Americas 1SET191004R0000 Bulk 1
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    RS 1SET191004R0000 Bulk 18 Weeks 1
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    Master Electronics 1SET191004R0000 1
    • 1 $536.86
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    Sager 1SET191004R0000 1 1
    • 1 $330
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    TE Connectivity T1916240163-001 (ALTERNATE: T1916240163-001)

    Heavy Duty Connector Hood, Side Entry, H24BPR-TSH-4S-M63, Screwlock | TE Connectivity T1916240163-001
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    RS T1916240163-001 (ALTERNATE: T1916240163-001) Bulk 40 1
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    • 100 $23.9
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    TE Connectivity T1910060140-000 (ALTERNATE: T1910060140-000)

    H6BPR-TSH-M40 | TE Connectivity T1910060140-000
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    RS T1910060140-000 (ALTERNATE: T1910060140-000) Bulk 5
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    TE Connectivity T1910240150-000 (ALTERNATE: T1910240150-000)

    H24BPR-TSH-M50 | TE Connectivity T1910240150-000
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    RS T1910240150-000 (ALTERNATE: T1910240150-000) Bulk 3
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    ET191 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ET191 Fuji Electric TRANS GP BJT NPN 600V 12A 3SC-65 Original PDF
    ET191 Collmer Semiconductor Bipolar Transistor Selection Guide Scan PDF
    ET191 Fuji Electric Power Transistor Scan PDF
    ET191 Fuji Electric TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING Scan PDF
    ET-191 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    ET191 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor ET191

    Abstract: ET-191 ET191 SC-65
    Text: ET191 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High D.C. current gain High reliability Applications Switching regulators General purpose power amplifiers JEDEC EIAJ 種 機 Maximum ratings and characteristic


    Original
    PDF ET191 200mA 240mA -240mA, transistor ET191 ET-191 ET191 SC-65

    transistor ET191

    Abstract: ET-191 ET191 SC-65
    Text: ET191 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING Outline Drawings TO-3P Features High D.C. current gain High reliability Applications Switching regulators General purpose power amplifiers JEDEC EIAJ SC-65 Maximum ratings and characteristic


    Original
    PDF ET191 SC-65 200mA 240mA -240mA, transistor ET191 ET-191 ET191 SC-65

    2SC2625

    Abstract: et190 equivalent ET191 2sc2625 equivalent ET206 2SC2929 2SD1072 2SD982 2SC2438 2SC2542
    Text: パワーデバイス / Power Devices • パワートランジスタ (モールドタイプ) Power Transistors Molded types 超高速スイッチングトランジスタ High speed switching transistors 形 式 Device type VCBO VCEO 2SC2438 2SC2767


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    PDF 2SC2438 2SC2767 2SC2768 2SC2769 2SC2944 2SC2626 2SC2929 2SC2542 2SC3723 2SC3317 2SC2625 et190 equivalent ET191 2sc2625 equivalent ET206 2SC2929 2SD1072 2SD982 2SC2438 2SC2542

    ET192

    Abstract: ET-191 ET191 S320 S-321 S321
    Text: ET 19 Series TCXO INFICON EDC Inc. Features: Quality Quartz Crystals and Oscillators SMD Oscillators 11.4 x 11.8 mm, Mechanical Trim, With or Without Voltage Control, Sinewave Output PARAMETERS Package Part# Frequency Range MHz Frequency Stability vs Temp. (±ppm)


    Original
    PDF ET191 ET192 ET192 ET-191 ET191 S320 S-321 S321

    2SD921

    Abstract: 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242
    Text: BIPOLAR TRANSISTORS Nov-01 Quick Selection Guide Comprehensive chart -40 to 400 voltage Collector current Ic cont. * PNP transistor VCEO sus Voltage min. Collector-to-emitter voltage -80 40 (A) -5 3 4 50 60 80 100 180 200 250 300 2SD834 2SD1128 2SD921 2SC2767


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    PDF Nov-01 2SC2929 2SD1157 2SD834 2SD1073 2SD1128 2SD921 2SC2767 2SD982 2SC2768 2SC2625 2sc2625 equivalent et190 transistor ET401 2sc3030 2SC2625 transistor 2sc3318 ET206 2sc4242

    2SC4510R

    Abstract: ET127 ET-190 et190 ringing choke converter
    Text: • /\°7 — x / W X / Power Devices # 1 Ir^ lt / \°7 — £ — U > K > h "7 > v JX. £ m s£ Devic«type 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 ET191 VcBO V £0 Power darlington transistors Ic -,$£5 Cont. Amps. Watts <Mm.


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    PDF 2SD833 2SD916 ET378 2SD834 2SD1073 2SD835 2SD1072 2SD1071 ET375 ET190 2SC4510R ET127 ET-190 ringing choke converter

    ET191

    Abstract: ET-191 t930 A-213 SC-65
    Text: ET191 E ± ' < r7 - h :7 > ' > t Z ? TRIPLE D IFFU SED PLANER TYPE POW ER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING aw s, : Outline Drawings / 3 .2 ‘0I • W f i 1 Features • ffl High D .C . current gain • S fffU të High reliability 1.6 i Applications


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    PDF ET191 SC-65 I95t/R89) ET191 ET-191 t930 A-213 SC-65

    C4977

    Abstract: 2SD111 C2656 EVK31-050 1di75 D1072 9212S C2438 c3317 2di75
    Text: BIPOLAR TRANSISTORS Ratings and Specifications Alphanum erical index Typ e Page Gr Ne ET127 ET 188 ET 190 ET191 E T206 11 11 10 10 10 11 11 8 8 9 E T365 E T 36 6 ET367 10 10 11 8 10 E T375 ET378 E T382 E T383 10 10 9 10 8 H / 9 E T385 E T386 10 10 H 8 ET391


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    PDF ET127 ET191 ET367 ET378 ET391 ET400 ET401 ETF81 ETL81 1DI75E C4977 2SD111 C2656 EVK31-050 1di75 D1072 9212S C2438 c3317 2di75

    VCBo-600V

    Abstract: 30S3 A-213 ET191 SC-65 T151 T460 TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON ET-191
    Text: ET191 g ± / < 7 - h TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING aw s, • : Outline Drawings *32' ■ ¡K H !: : Features • ■ffl High D .C . current gain • B f f f H ii High reliability 22. i A pplications • Switching regulators


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    PDF ET191 I95t/R89) VCBo-600V 30S3 A-213 ET191 SC-65 T151 T460 TRIPLE DIFFUSED PLANER TYPE POWER DARLINGTON ET-191

    ET-191

    Abstract: ET191 t930 A-213 SC-65 T151 T460 T760 ic AM 12A
    Text: ET191 E ± ' < r7 - h :7 > ' > t Z ? TRIPLE D IFFU SED PLANER TYPE POW ER DARLINGTON HIGH VOLTAGE, HIGH SPEED SWITCHING aw s, : Outline Drawings / 3 .2 ‘0I • W f i 1 Features • ffl High D .C . current gain • S ff fU të n I High reliability 2JL 1.6


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    PDF ET191 SC-65 N-Tgll819* I95t/R89) ET-191 ET191 t930 A-213 SC-65 T151 T460 T760 ic AM 12A

    transistor m6e

    Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
    Text: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.


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    PDF 0D01b03 1SI50A-050 2SC3047 T0-220AB 2SC3549 2SC3551 1SI10A-100 2SD847 2SD1157 transistor m6e ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050

    6DI15S-050

    Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
    Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140


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    PDF 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 1DI200Z-120 1DI200ZN-120 1DI200ZP-120 1DI300M-050 6DI15S-050 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050

    ET-191

    Abstract: No abstract text available
    Text: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*


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    PDF 2SD921 2SC2929 2SC3549 2SC3551 2SD1157 2SC3550 ET383 2SD834 2SD1073 ET393 ET-191

    et1275

    Abstract: M101 2SC3551 equivalent
    Text: B IP O LA R T R A N S IS T O R S R atings and Specifications COLLMER Q3 SEMICONDUCTOR INC M6E D • 22307^2 0D01b03 13 1 « C O L Buffer drive tra n sisto rs • B e st su ite d fo r d riv in g t r a n sis to r m o d u le s. • A ll t e r m in a ls are in su la te d fro m m o u n t in g plate.


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    PDF 0D01b03 1SI50A-050 2SC3047 T0-220AB 2SC3549 2SC3551 1SI10A-100 2SD847 2SD1157 et1275 M101 2SC3551 equivalent

    2sc4977

    Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
    Text: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549


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    PDF 2SC3550 2SD921 2SC3551 ET383 2SC3505 2SC4419 2SC2656 2SC3030 ET190 2SD923 2sc4977 transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391

    2sb757

    Abstract: 2SC3551
    Text: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE


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    PDF 2SC3549 2SC3550 2SC3551 2SC3505 2SC4419 2SC3030 O-22QAB 1D500A-030 ETN35-030 ETM36-030 2sb757

    ET-191

    Abstract: No abstract text available
    Text: K l Power darlington transistors • The DC c u rre n t gain is high, • H ig h ly ve rsatile Dc'vii;« typo Volts Volts V geo sus Volts 60 60 50 7 30 800 3 1.5 — 80 80 80 7 60 2000 3 3 1.0 80 80 80 7 40 1000 3 1.5 1.0 150 100 80 7 25 400 5 2 2.0 VcESO


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    PDF 2SD916 O-220F17 O-220AB ET206 ET383 2SC3047 000372G ET-191

    25c2625

    Abstract: 2SC2625 2SC2930 2SC3725 ETG36-040D 1000 volt npn 2sd922 2SC3866 Fuji 2SC2930 npn transistor 2sc2625
    Text: COLLHER S E M I C O N D U C T O R INC MAE D • 22 36 7 1 2 OGDlSflO flOl « C O L Switching fransistors/MOV's ^ ^ SWITCHING TRANSISTORS TQ-220AB kcont. Amps. Max. V ceo sus 3 400 800 250 -8 0 100 200 200 200 200 350 400 400 400 400 300 350 500 80 80 400


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    PDF O-220AB O-220F 2SC2929 2SC3549 2SD1073 2SB862" 2SD1128 2SD930 2SD2767 2SD634 25c2625 2SC2625 2SC2930 2SC3725 ETG36-040D 1000 volt npn 2sd922 2SC3866 Fuji 2SC2930 npn transistor 2sc2625

    2sc4977

    Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
    Text: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS


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    PDF 2SC2929 2SC3549 2SD1157 2SD834 2SD1073 2SB862* 2SD1128 2SD982 2SC2767 2SD1072 2sc4977 transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor

    2SC3033

    Abstract: Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191
    Text: COLL MER SEMICONDUCTOR INC MAE D • 22367=12 OüDlSflQ SOI « C O L Switching Iftmsistors/MQV's ^ g SWITCHING TRANSISTORS TO-220AB TO-220F kcont. V c e o s u s Volts Pc Device type Amps. Max. Min. Watts NPN 3 400 600 60 40 2SC2929 2SC3549 4 250 60 2SD1073


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    PDF O-220AB 2SC2929 2SC3549 2SD1073 2SB862* 2SD1128 2SD930 2SD2767 2SD834 2SD982 2SC3033 Transistor 2sc2246 ETG36-040D 2sd920 2SC2437 2SC2930 ET403 NPN 2SC382 2SC303 transistor ET191

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


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    PDF B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383

    ET1275

    Abstract: 1si50a-050 1SI50A-100 ET191 ET206 et191 to-3p M101 et391 2SC3551 equivalent 1SI10A-100
    Text: BIPOLAR TRANSISTORS Ratings and Specifications COLL HER SEMICONDUCTOR INC [Q MÔE D • 25307^2 0DGlb03 131 * C 0 L Buffer drive transistors • Best su ited fo r d riv in g tra n s is to r m o d u le s. • A ll te rm in a ls are in su la te d fro m m o u n tin g plate.


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    PDF 1SI50A-050 2SC3047 O-220AB 2SC3549 2SC3551 1SI10A-100 2SD847 2SD1157 ET1275 1SI50A-100 ET191 ET206 et191 to-3p M101 et391 2SC3551 equivalent

    Untitled

    Abstract: No abstract text available
    Text: P ow er d arlington transistors • T h e DC c u r r e n t g a i n is h i g h . • H ig h ly v e rs a tile Device type VCBO V o lts Vcí o V o lts Veto sus V o lts Ic Pc c o n t. A m p s . W a tts h tt m in . le A m ps. Vo V o lts 2SD1797 60 60 50 7 30


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    PDF 2SD1797 2SD833 2SD916 2SD1726 2SD834 2SD1073 2SD1071 2SD835 2SD1072 ET366

    2SD1071

    Abstract: 2SD923 ET-391 2sc2625 2SC2929 ET401 2sc4786 transistor 2sc2625 ET367 ET391
    Text: TRANSISTORS 1 te 1&4I 1 IC AMPS V ceo V sus Max. Device Type VCEO V Pc Device Type Max. (sus) W NPN 180 80 2SD921 5 500 40 2SC4786 800 80 2SC3551 10 400 80 ET400 1000* 80 ET383 400 80 ET401 80 2SC4510 5 6 7 10 700 80 2SC3505 800 100 2SC4419 400 80 2SC2656


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    PDF 2SD921 2SC3551 ET383 2SC3505 2SC4419 2SC2656 2SC3030 2SD923 ET378 2SC2625 2SD1071 ET-391 2SC2929 ET401 2sc4786 transistor 2sc2625 ET367 ET391