S29WS256N
Abstract: No abstract text available
Text: Flash Memory Erase Mode Comparison Simultaneous Read/Write vs Erase Suspend Application Note Introduction Simultaneous Read/Write devices are designed to allow reading from a Flash device at the same time an erase or program operation is being executed. The Erase Suspend/Resume feature is
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Untitled
Abstract: No abstract text available
Text: Simultaneous Read/Write vs. Erase Suspend/Resume Application Note Introduction Simultaneous Read/Write devices are designed to allow reading from a Flash device at the same time an erase or program operation is being executed. The Erase Suspend/Resume feature is intended to be
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flash "high temperature data retention" mechanism
Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
Text: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: [email protected] Abstract––Program/erase endurance data for SuperFlash
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32Kbit
flash "high temperature data retention" mechanism
Angstrem
Hebrew
material science and technology
1117 FG
0.18-um CMOS Flash technology
DSASW0037374
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AS29F040-120LC
Abstract: AS29F040 AS29F040-55TC AS29F040-55TI MS-016
Text: 3UHOLPLQDU\#LQIRUPDWLRQ $65< 373 89#845.ð;#&026#)ODVK# 3520 )HDWXUHV /RJLF#EORFN#GLDJUDP 3LQ#DUUDQJHPHQW VCC VSS DQ0–DQ7 Erase voltage generator Input/output buffers A11 A9 A8 A13 A14 A17 WE VCC A18 A16 A15 A12 A7 A6 A5 A4 Program/erase control Command
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32-pin
AS29F040
AS29F040-120LC
AS29F040
AS29F040-55TC
AS29F040-55TI
MS-016
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29EE010
Abstract: 28F001BX 28F010
Text: Safe Updating With SST Page Mode EEPROM Memories Application Note 1.0 INTRODUCTION A major advantage of flash memory is the ability to update BIOS and boot programs electronically in-system. A major concern is the minimum size of the erase element in the flash EPROM memory. A large erase
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28F010,
29EE010
28F001BX
28F010
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serial flash M25P10
Abstract: No abstract text available
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
serial flash M25P10
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M25P20
Abstract: ST10
Text: M25P20 2 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRODUCT PREVIEW FEATURES SUMMARY • 2 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (512 Kbit) in 2 s (typical) ■ Bulk Erase (2 Mbit) in 4 s (typical)
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M25P20
M25P20
ST10
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Untitled
Abstract: No abstract text available
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
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M25P40
Abstract: ST10
Text: M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRODUCT PREVIEW FEATURES SUMMARY • 4 Mbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (512 Kbit) in 2 s (typical) ■ Bulk Erase (4 Mbit) in 8 s (typical)
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M25P40
M25P40
ST10
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am28f020-95
Abstract: M28F020
Text: a A dvance In fo rm a tio n Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ ■ Flasherase or Embedded Erase™ Electrical Bulk Chip-Erase - Two second typical chip-erase
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Am28F020
32-Pin
28F020-95C
am28f020-95
M28F020
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Untitled
Abstract: No abstract text available
Text: TMS29F002T, TMS29F002B 262144 BY 8-BIT FLASH MEMORIES 100 000 Program/Erase Cycles Low Power Dissipation Low Current Consumption - 40-mA Typical Active Read - 60-mA Typical Program/Erase Current - Less Than 100- iA Standby Current All Inputs/Outputs TTL-Compatible
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TMS29F002T,
TMS29F002B
SMJS848
TMS29F002T/B
2097152-bit)
16K-byte
32K-byte
64K-byte
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intel 80386SL
Abstract: 82360SL 386SL CCD MTBF W 20 K85 LH28F008SAT-K85 8AAD
Text: SHARP 1 LHF08S17 - CONTENTS 1 FEATURES 2 2 PRODUCT OVERVIEW 3 3 PRINCIPLES OF OPERATION 4 BUS OPERATION 9 5 COMMAND DEFINITIONS 11 6 EXTENDED BLOCK ERASE/BYTE WRITE CYCLING 7 AUTOMATED BYTE WRITE 13 8 AUTOMATED BLOCK ERASE 13 9 DESIGN CONSIDERATIONS .
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LHF08S17
intel 80386SL
82360SL
386SL
CCD MTBF
W 20 K85
LH28F008SAT-K85
8AAD
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Am29F040
Abstract: No abstract text available
Text: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands
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Am29F040
32-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 Am29LV081 8 Megabit 1,048,576 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized architecture for Miniature Card and mass storage applications ■ — Embedded Erase algorithms automatically preprogram and erase the entire chip or any
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Am29LV081
16-038-TSOP-1
TSR040
40-Pin
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intel 27f64
Abstract: 27F64 P2764A AP-314 2764A 2764a eprom PINOUT 294005 27C64 D27F64-150V05 D27F64-170V05
Text: inteT A iu o li» « ? 27F64 64K 8K x 8 CHMOS FLASH MEMORY Quick-Erase Algorithm — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades High Performance Speeds — 150 ns Maximum Access Time
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27F64
27C64
27F64
8192ry
2147H,
27F64,
AP-314
intel 27f64
P2764A
AP-314
2764A
2764a eprom PINOUT
294005
D27F64-150V05
D27F64-170V05
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29f200b
Abstract: 0032M AM29 FLASH SO044
Text: PRELIM INARY Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
44-pin
48-pin
29f200b
0032M
AM29 FLASH
SO044
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am29f010
Abstract: am29f010-90 AM29F01055 AM29F010-70 Am29F010 Rev A
Text: a PRELIMINARY A m 2 9 F 0 1 0 131,072 x 8-Bit CMOS 5.0 V-Only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ 5.0 V ± 10% write and erase - Minimizes system level power consumption Compatible with JEDEC-standard commands
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Am29F010
am29f010-90
AM29F01055
AM29F010-70
Am29F010 Rev A
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programming 29F400
Abstract: COVIC
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ 5.0 V ± 10% read, w rite, and erase — Minimizes system level power requirements
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
29F400T/Am29F400B
0257S2Ã
0D325bb
programming 29F400
COVIC
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290153
Abstract: No abstract text available
Text: ir r t e T 64K 8K X 57F64 8 CHMOS FLASH EPROM • Flash-Erase — Two Second Typical Array Electrical Erasure On-Board Program/Erase — New Modes Simplify In-Module Firmware Upgrades ■ High Performance Speeds — 150 ns Maximum Access Time 2764A and 27C64 JEDEC Pinout
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57F64
27C64
290153
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programming AM29F400
Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
44-pin
48-pin
D257S2Ã
003S5bb
programming AM29F400
TSOP 48 Package am29f400
AM29F400T
AM29F400
Am29f400 equivalent
AM29 FLASH
OES752
29f400b
AM29F400TB
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FZj 111
Abstract: M9346B1 M9346B6 M9346M1 M9346M6
Text: SGS-THOMSON M9346 ¡y 1024 BIT 64 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY
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M9346
64x16
M9346
14-LEAD
FZj 111
M9346B1
M9346B6
M9346M1
M9346M6
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Maxim 17113
Abstract: 29F040 29F040 equivalent
Text: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ ■ Em bedded Program Algorithm s
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Am29F040
32-pin
29F040
Maxim 17113
29F040 equivalent
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programming 29F400
Abstract: 29f400 29f400t am29f400
Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, w rite, and erase ■ ■ — Minimizes system level power requirements
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OCR Scan
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Am29F400T/Am29F400B
8-Bit/262
16-Bit)
44-pin
48-pin
29F400T/Am
29F400B
programming 29F400
29f400
29f400t
am29f400
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29F200
Abstract: 29F200 amd 29F200T
Text: a P R E L IM IN A R Y Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements
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Am29F200T/Am29F200B
8-Bit/131
16-Bit)
29F200
29F200 amd
29F200T
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