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    294005 Search Results

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    294005 Price and Stock

    TE Connectivity 294005-E

    MICROCON F 040POS B VERT 4MM
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    DigiKey 294005-E Digi-Reel 442 1
    • 1 $7.37
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    294005-E Cut Tape 442 1
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    294005-E Reel 1,000
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    Avnet Americas 294005-E Bulk 1,000 23 Weeks, 6 Days 1
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    Mouser Electronics 294005-E
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    Verical 294005-E 1,000 1,000
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    294005-E 1,000 1,000
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    Arrow Electronics 294005-E 1,000 26 Weeks 1,000
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    294005-E 1,000 27 Weeks 1,000
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    Newark 294005-E Bulk 938 1
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    RS 294005-E Bulk 26 Weeks 1,000
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    Onlinecomponents.com 294005-E
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    Interstate Connecting Components 294005-E 250
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    Avnet Abacus 294005-E 1,000 28 Weeks 1,000
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    Master Electronics 294005-E
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    Henkel Corporation / Loctite 2940056

    TEROSON MS 9399 B BK DR250KG EN/
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    DigiKey 2940056 1
    • 1 $9463.25
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    Mouser Electronics 2940056
    • 1 $8940.93
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    Phoenix Contact 2940058

    HOUSING PLSTC GRN 2.95"LX2.95"W
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    DigiKey 2940058 Bulk 1
    • 1 $84.2
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    Mouser Electronics 2940058
    • 1 $85.16
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    Master Electronics 2940058 3
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    Sager 2940058
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    Molex 0192940052

    HAND TOOL MHT202D
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    DigiKey 0192940052 Bulk 1
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    Sager 0192940052 1
    • 1 $57.31
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    Molex 2082940050

    PICO-EZMATE HC 1.8 PLUGASSY ETP
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    DigiKey 2082940050 Reel 5,000
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    TTI 2082940050 Reel 5,000 5,000
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    Interstate Connecting Components 2082940050 1,250
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    Avnet Abacus 2082940050 25 Weeks 30,000
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    294005 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    294005 ERNI MICROCON F 040POS B VERT 4MM Original PDF

    294005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog EMG 75-LG/SET Order No.: 2940058 The illustration shows version EMG 75-LG Electronic housing set, consisting of electronic module and printed circuit termination blocks, pitch 5


    Original
    PDF 75-LG/SET 75-LG CC-2009) 75-LG/SET

    Untitled

    Abstract: No abstract text available
    Text: Extract from the online catalog EMG 75-LG/SET Order No.: 2940058 The illustration shows version EMG 75-LG Electronic housing set, consisting of electronic module and printed circuit termination blocks, pitch 5


    Original
    PDF 75-LG/SET 75-LG CC-2009) 75-LG/SET

    AN28F010-150

    Abstract: AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive
    Text: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) Y Automotive Temperature Range b 40 C to a 125 C Y Flash Memory Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Chip-Program Y


    Original
    PDF A28F010 1024K 32-Pin 32-Lead AP28F010-120 AP28F010-150 AN28F010-120 AN28F010-150 AN28F010-150 AN28F010-120 28F010 80C186 A28F010 AP28F010-150 intel Automotive

    Untitled

    Abstract: No abstract text available
    Text: MicroCon 0,8 mm Steckverbinder AUS. 04 | 09.2014 Originalgröße MicroCon 50 Pins Katalog D 074607 MicroCon - 0,8 mm Steckverbinder ZWEIREIHIGER STECKVERBINDER ALLGEMEINES MicroCon Feder- und Messerleiste Die zweireihige MicroCon-Baureihe im 0,8 mm Raster


    Original
    PDF 50-polige

    memory eras

    Abstract: intel EPROM
    Text: iny ENGINEERING REPORT ER-20 September 1989 ETOX ll Flash Memory Technology 6 JASON ZILLER PRODUCT ENGINEERING Order Number: 294005-006 6-371 E T O X T M II FLASH MEMORY TECHNOLOGY CONTENTS page in t r o d u c t io n . 6-373


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    PDF ER-20 memory eras intel EPROM

    IN6AG

    Abstract: 28F020 intel 28F020
    Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


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    PDF 28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


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    PDF 28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077

    M28F020-20

    Abstract: MD28F020-20/B
    Text: in te l ß o n iy ß iß O A O tfr M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum


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    PDF M28F020 2048K MD28F020-90 MD28F020-12 MD28F020-15 MD28F020-20 MF28F020-90 MF28F020-12 MF28F020-15 MF28F020-20 M28F020-20 MD28F020-20/B

    Untitled

    Abstract: No abstract text available
    Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


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    PDF 28F256A 2bl75

    Untitled

    Abstract: No abstract text available
    Text: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program


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    PDF 28F256A Cu56A-150 150f1* F256A-120 F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325,

    Untitled

    Abstract: No abstract text available
    Text: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Extended Automotive Temperature Range: -40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Integrated Program/Erase Stop Timer B command Register Architecture for


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    PDF A28F010 1024K 32-LE AP28F010-150 AN28F010-150 ER-20, ER-24, 28F010 RR-60, AP-316,

    Untitled

    Abstract: No abstract text available
    Text: P R lO B M A IifR r ¡ n ie l M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum


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    PDF M28F020 2048K MD28F020-90 MF28F020-90 MD28F020-12 MF28F020-12 MD28F020-15 MF28F020-15 MD28F020-20 MF28F020-20

    8155 intel microcontroller architecture

    Abstract: No abstract text available
    Text: A28F010 1024K 128K x 8 CMOS FLASH MEMORY (Automotive) a Automotive Temperature Range: —40°C to + 125°C • Flash Memory Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Chip-Program


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    PDF A28F010 1024K 120ns AP28F010-120 AN28F010-120 AP28F010-150 AN28F010-150 ER-20, ER-24, RR-60, 8155 intel microcontroller architecture

    28F001

    Abstract: intel 28F001BXT
    Text: in t e i, 28F001BX-T/28F001BX-B 1M 128K x 8 CMOS FLASH MEMORY • High Integration Blocked Architecture — One 8KB Boot Block w/Lock Out — Two 4KB Parameter Blocks — One 112KB Main Block ■ 10,000 Erase/Program Cycles Minimum Per Block ■ Simplified Program and Erase


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    PDF 28F001BX-T/28F001BX-B 112KB 32-Lead 28F001BX 28F001 intel 28F001BXT

    TN28F010

    Abstract: 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


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    PDF 1024K 28F010 USA/E69Q/1093/5K/MS TN28F010 29020

    D28F010-120P1C4

    Abstract: D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010 28F010
    Text: INTEL CORP M EM OR Y / L O G I C 15E D I MflSbl7b QObllOl 0 I ir'iraSMUWULfM^lrtU 28F010 T'H6-I5'Z7 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Program m ing Algorithm — 10 jus Typical Byte-Program


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    PDF 28F010 1024K T-46-13-27 D28F010-120P1C4 D28F010-150P1C4 D28F010-200P1C4 N28F010-120P1C4 N28F010-150P1C4 N28F010-200P1C4 ER-20, D28F010-12 28F010150P 28F010P 29020 N28F010-200P1C4 D28F010

    AS263

    Abstract: 271066 l213d
    Text: INTEL CORP UP/PRPHLS ' EQE |) • 4fi2bl7S OOfilSS? T ■ ¡ n y * M28F256 n?4(eHV2.7 256K (32K x 8) CMOS FLASH MEMORY M ilitary a Flash Electrical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


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    PDF M28F256 M28F256-25 4fl2bl75 M28F256 AS263 271066 l213d

    AP28F512-120

    Abstract: No abstract text available
    Text: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -4 0 °C to +125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juts Typical Byte-Program — 1 Second Chip-Program


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    PDF A28F512 32-LEAD AP28F512-150 AP28F512-120 AN28F512-150 AN28F512-120 EFt-20, ER-23, RR-60,

    28F512

    Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
    Text: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read


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    PDF 28F512 28F512-120 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 28F512 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming

    SM28F001AX

    Abstract: AX-200 29020 PPH 2222 36 64 mbit static ram simm
    Text: in te i' SM28F001AX 1 MBYTE 512K x 16 CMOS FLASH SIMM High-Performance — 135 ns Maximum Access Time — 14.81 MB/s Read Transfer Rate 100,000 Rewrite Cycles Typical/ Component Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase 16 jjls Typical Word Write


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    PDF SM28F001AX 80-pin --\05flu6enterline SM2BF001AX SM28F001 AX-200 ER-20, ER-24, 28F010 29020 PPH 2222 36 64 mbit static ram simm

    F256A-200

    Abstract: 28F256A P28F256A-150 N28F256A-120 28F256 2SF256 32-PIN 80C186 P28F256A-120
    Text: in te l 28F256A 256K 32K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10/ j.s Typical Byte-Program — 0.5 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


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    PDF 28F256A P28F256A-120 P28F256A-150 N28F256A-120 N28F256A-150 ER-20, ER-24, RR-60, AP-316, AP-325, F256A-200 28F256A P28F256A-150 28F256 2SF256 32-PIN 80C186 P28F256A-120

    2SF512

    Abstract: No abstract text available
    Text: 28F512 D Q q -D Q 7 E R A S E V O LTAG E IN P U T / O U T P U T SW ITC H BUFFERS TO A R R A Y SO U R C E ST A T E C O N TR O L COMMAND R E G IST ER IN T EG R A T ED STO P T IM ER u PGM V O LTAG E SW ITC H C H IP E N A B L E O U T PU T E N A B L E CE# • DAT A


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    PDF 28F512 28F512 P28F512 P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 2SF512

    29020

    Abstract: No abstract text available
    Text: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


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    PDF 28F010 1024K 28F010-65 28F010-90 29020

    29024

    Abstract: burndy burndy ms N28F010 28f010-200
    Text: intd. ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/


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    PDF SM001FLKA 80-Pln SM001 80-PIN SM001FLKA-120 iSM001 FLKA-200 ER-20, ER-24, 29024 burndy burndy ms N28F010 28f010-200