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    EQUIVALENT TRANSISTOR 2SK Search Results

    EQUIVALENT TRANSISTOR 2SK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR 2SK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1955

    Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET

    Power MOSFET, toshiba

    Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    HN7G02FU

    Abstract: 2SK1830 RN2110 2SK183
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU 2SK183

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SC2812

    Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
    Text: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,


    Original     		PDF ENN7021 2SK1740 2SC2812 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965

    AM/Tuner

    Abstract: 2SK937 2SC2812 FC21 2SK93-7
    Text: FC21 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp. AM tuner RF Amp. Applications TENTATIVE Features •Composed of 2 chips, one being equivalent the 2SK937 and the other the 2SC2812 in the conventional CP package,


    Original     		PDF 2SK937 2SC2812 971205TM2fXHD AM/Tuner FC21 2SK93-7

    2SA1955

    Abstract: 2SK1830 HN7G01FU
    Text: HN7G01FU TOSHIBA TOSHIBA TENTATIVE MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 ± 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01 2SA1955 2SK1830 HN7G01FU

    ei33

    Abstract: 2SK1830 J-10
    Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1830 10//S ei33 2SK1830 J-10

    2SK182

    Abstract: LTF5
    Text: 2SK1826 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 82 6 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : V'^ = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1826 2SK182 LTF5

    IFN147

    Abstract: No abstract text available
    Text: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA


    OCR Scan     		PDF IFN147 2SK147 NJ450 00Q0BG4 IFN147

    2SK1830

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1830 10//S 2SK1830

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7021 | TR : NPN Epitaxial Planar Silicon Transistor _FET : N-Channel Silicon Junction FET FC21 IS A /tY O l High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features * The FC21 contains both a 2SK1740 equivalent chip


    OCR Scan     		PDF ENN7021 2SK1740 2SC2812

    2SK1826

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1826 961001EAA2 2SK1826

    K1825

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1825 000707EAA1 K1825

    2SK1825

    Abstract: No abstract text available
    Text: TO SHIBA 2SK1825 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1825 961001EAA2 2SK1825

    2sk18

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1827 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2S K 18 2 7 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : V'^ = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT


    OCR Scan     		PDF 2SK1827 10//S 2sk18