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Toshiba America Electronic Components 2SA1955FVBTPL3Z TRANS PNP 12V 0.4A VESM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1955FVBTPL3Z	Cut Tape	2,695		1	1 $0.17 10 $0.146 100 $0.17 1000 $0.10469 10000 $0.09964	Buy Now
	2SA1955FVBTPL3Z	Digi-Reel	2,695		1	1 $0.17 10 $0.146 100 $0.17 1000 $0.10469 10000 $0.09964	Buy Now
	2SA1955FVBTPL3Z	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SA1955FVATPL3Z TRANS PNP 12V 0.4A CST3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1955FVATPL3Z	Cut Tape	2,376		1	1 $0.22 10 $0.139 100 $0.22 1000 $0.07562 10000 $0.07123	Buy Now
	2SA1955FVATPL3Z	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	2SA1955FVATPL3Z					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	2SA1955FVATPL3Z		7,920			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SA1955FVATPL3Z		6,336			1 $0.604 10 $0.604 100 $0.604 1000 $0.1812 10000 $0.1208	Buy Now
Toshiba America Electronic Components 2SA1955FV-A(TPL3,Z)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA1955FV-A(TPL3,Z)		7,573			1 $0.73 10 $0.73 100 $0.73 1000 $0.73 10000 $0.219	Buy Now
Toshiba America Electronic Components 2SA1955FV-A(TPL3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SA1955FV-A(TPL3)		775			1 $0.9 10 $0.9 100 $0.405 1000 $0.27 10000 $0.27	Buy Now

2SA1955 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1955	Toshiba	General Purpose Transistors (Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; Comments: High current; Part Number: 2SC5376; DC Current Gain hFE, min: (min 300) (max 1000); DC Current Gain hFE, max: (max -0.03); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -12)	Original	PDF
2SA1955	Unknown	PNP transistor	Scan	PDF
2SA1955	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1955	Toshiba	TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)	Scan	PDF
2SA1955A	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF
2SA1955B	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF
2SA1955F	Toshiba	Transistor for Low-Frequency Small-Signal Amplification	Original	PDF
2SA1955FV	Toshiba	Transistor for Low-Frequency Small-Signal Amplification	Original	PDF
2SA1955FVATPL3Z	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM	Original	PDF
2SA1955FVBTPL3Z	Toshiba	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM	Original	PDF

2SA1955 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
sat 1205 Abstract: 2SA1955FV Text: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項目記号定格 2 単位コレクタ･ベース間電圧	Original	PDF	2SA1955FV sat 1205 2SA1955FV
2SA1955F Abstract: No abstract text available Text: 2SA1955F シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1955F ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)	Original	PDF	2SA1955F 2SA1955F
2SA1955 Abstract: No abstract text available Text: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •	Original	PDF	2SA1955 2SA1955
2SA1955 Abstract: HN7G01FE SSM3K03FE Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FE 2SA1955 SSM3K03FE HN7G01FE
2SA1955F Abstract: No abstract text available Text: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA	Original	PDF	2SA1955F 2SA1955F
Untitled Abstract: No abstract text available Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FU 2SA1955 2SK1830
2SA1955 Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
2SA1955 Abstract: HN7G03FU SSM3K04FU Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G03FU 2SA1955 SSM3K04FU HN7G03FU
2SA1955 Abstract: HN7G01FE SSM3K03FE Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FE 2SA1955 SSM3K03FE HN7G01FE
2SA1955 Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET
HN7G01FU Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
2SA1955FV Abstract: No abstract text available Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage	Original	PDF	2SA1955FV 2SA1955FV
Untitled Abstract: No abstract text available Text: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA	Original	PDF	2SA1955F
Untitled Abstract: No abstract text available Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Large collector current: IC = −400 mA (max) 0.32±0.05 0.8±0.05 0.4 • 1.2±0.05 @IC = −10 mA/IB = −0.5 mA	Original	PDF	2SA1955FV 15esented

2SA1955 Abstract: No abstract text available Text: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA ·	Original	PDF	2SA1955 2SA1955
Untitled Abstract: No abstract text available Text: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA	Original	PDF	2SA1955F
Untitled Abstract: No abstract text available Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G01FE 2SA1955 SSM3K03FE
2SA1955 Abstract: HN7G03FU SSM3K04FU Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	HN7G03FU 2SA1955 SSM3K04FU HN7G03FU
2SA1955 Abstract: HN7G03FU SSM3K04FU Text: HN7G03FU 東芝複合デバイス HN7G03FU ○ パワーコントロールスイッチ用 ○ ドライバー回路用 ○ インターフェイス回路用 z Q1（トランジスタ） z Q2（S-MOS 単位: mm : 2SA1955 相当 : SSM3K04FU 相当 Q1 絶対最大定格 Ta = 25°C)	Original	PDF	HN7G03FU 2SA1955 SSM3K04FU 2SA1955 HN7G03FU SSM3K04FU
2SA1955 Abstract: No abstract text available Text: 2SA1955 TO SH IBA 2 S A 1 955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION 1.6 ± 0.2 ,0.8 ± 0 .1, r— : —1 • Low Saturation Voltage : VCE (sat) (1) = - l5mV (TyP-)	OCR Scan	PDF	2SA1955 --400mA 2SA1955
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1955 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 955 G EN ERA L PURPOSE A M PLIFIER APPLICATIO NS Unit in mm SW ITCH IN G A N D M U T IN G SW ITCH A PPLICATIO N 1 .6 1 0 .2 0.8 ± 0 .1, • Low Saturation Voltage • Large Collector Current	OCR Scan	PDF	2SA1955 --15mV --10mA/ --400mA OL44IUSYMBOL
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	PDF	HN7G01 2SA1955 2SK1830 HN7G01FU
2SA1955 Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA Text: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	PDF	HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
2SA1955 Abstract: 2SK1830 HN7G01FU Text: HN7G01FU TOSHIBA TOSHIBA TENTATIVE MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 ± 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	PDF	HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU

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Toshiba America Electronic Components 2SA1955FVBTPL3Z

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2SA1955 Datasheets (10)

2SA1955 Datasheets Context Search

sat 1205

2SA1955F

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HN7G01FU

2SA1955FV

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