EPA240D Search Results

EPA240D Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPA240D		Excelics Semiconductor	8-12V high efficiency heterojunction power FET		Original	PDF
EPA240D-100P		Excelics Semiconductor	Non-Hermetic 100 mil Package High Efficiency Heterojuction FETs		Original	PDF
EPA240D-CP083		Excelics Semiconductor	High Efficiency Heterojuction FETs		Original	PDF
EPA240D-SOT89		Eon Silicon Solution	DC-6GHz High Efficiency Heterojunction Power FET		Original	PDF

EPA240D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EPA240D Abstract: No abstract text available Text: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	EPA240D 33dBm EPA240D	PDF
EPA240D-SOT89 Abstract: EPA240D EPA240 Text: Excelics EPA240D-SOT89 DATA SHEET DC-6GHz High Efficiency Heterojunction Power FET Features '5$,1 6285& (Top View All Dimensions In Mils Applications • • • $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE	Original	EPA240D-SOT89 33dBm 40dBm EPA240D-SOT89 EPA240D EPA240	PDF
100MIL Abstract: EPA240D-100P AuSn eutectic Text: EPA240D-100P High Efficiency Heterojunction Power FET UPDATED 11/14/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +33 dBm TYPICAL OUTPUT POWER 20 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA240D-100P 100MIL 120mA 620mA EPA240D-100P AuSn eutectic	PDF
EPA240D Abstract: No abstract text available Text: EPA240D High Efficiency Heterojunction Power FET FEATURES 410 • • • • • • 104 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY,	Original	EPA240D 33dBm EPA240D	PDF
igd 001 Abstract: EPA240D-CP083 Text: EPA240D-CP083 High Efficiency Heterojunction Power FET UPDATED 07/19/2006 • • • • • • .096 .290±0.005 FEATURES NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +32.5 dBm OUTPUT POWER AT 1dB COMPRESSION 18.5 dB GAIN AT 2 GHz 0.5x2400 MICRON RECESSED “MUSHROOM” GATE	Original	EPA240D-CP083 160MIL 5x2400 175oC -65/175oC igd 001 EPA240D-CP083	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70	PDF
b1415 Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89 Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs	Original	RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C	PDF