EPA060A Search Results

EPA060A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPA060A		Excelics Semiconductor	8-12V high efficiency heterojunction power FET		Original	PDF
EPA060A		Excelics Semiconductor	High Efficiency Heterojunction Power FET		Original	PDF
EPA060AV		Excelics Semiconductor	High Efficiency Heterojunction Power FET		Original	PDF

EPA060A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EPA060A Abstract: 419-1 MAG EPA060AV Text: Excelics EPA060A/EPA060AV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EPA060A/EPA060AV EPA060A EPA060AV 18GHz EPA060A G1537 EPA060AV. 419-1 MAG
EPA060A Abstract: EPA060AV EPA160AV Text: EPA060A/EPA060AV High Efficiency Heterojunction Power FET FEATURES • • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EPA060A/EPA060AV EPA060A EPA060AV 18GHz EPA160AV) EPA060A EPA160AV
EPA060A Abstract: FET 3205 Text: Excelics EPA060A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +26.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION	Original	PDF	EPA060A 18GHz 12GHz EPA060A FET 3205
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	PDF	EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	PDF	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C