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    ELXY Price and Stock

    United Chemi-Con Inc ELXY500ELL471MK25S

    CAP ALUM 470UF 20% 50V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELXY500ELL471MK25S Bulk 5,813 1
    • 1 $1.23
    • 10 $0.764
    • 100 $0.5209
    • 1000 $0.39149
    • 10000 $0.33888
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    Mouser Electronics ELXY500ELL471MK25S 2,961
    • 1 $0.98
    • 10 $0.649
    • 100 $0.522
    • 1000 $0.372
    • 10000 $0.322
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    Bristol Electronics ELXY500ELL471MK25S 200
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    ELXY500ELL471MK25S 108 5
    • 1 -
    • 10 $1.125
    • 100 $0.4219
    • 1000 $0.4219
    • 10000 $0.4219
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    Richardson RFPD ELXY500ELL471MK25S 1
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    United Chemi-Con Inc ELXY500ELL390MFB5D

    CAP ALUM 39UF 20% 50V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELXY500ELL390MFB5D Bulk 3,172 1
    • 1 $0.48
    • 10 $0.288
    • 100 $0.1857
    • 1000 $0.14438
    • 10000 $0.10756
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    Farnell ELXY500ELL390MFB5D Each 1,831 32 Weeks, 3 Days 1
    • 1 £0.38
    • 10 £0.26
    • 100 £0.171
    • 1000 £0.171
    • 10000 £0.171
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    United Chemi-Con Inc ELXY350ETC470MFB5D

    CAP ALUM 47UF 20% 35V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELXY350ETC470MFB5D Cut Tape 2,000 1
    • 1 $0.49
    • 10 $0.291
    • 100 $0.1879
    • 1000 $0.13315
    • 10000 $0.13315
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    ELXY350ETC470MFB5D Ammo Pack 2,000 2,000
    • 1 -
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    • 10000 $0.10397
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    United Chemi-Con Inc ELXY160ELL121MFB5D

    CAP ALUM 120UF 20% 16V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELXY160ELL121MFB5D Bulk 1,988 1
    • 1 $0.48
    • 10 $0.288
    • 100 $0.1853
    • 1000 $0.13113
    • 10000 $0.10914
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    Master Electronics ELXY160ELL121MFB5D
    • 1 -
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    • 10000 $0.0628
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    United Chemi-Con Inc ELXY500ELL331MK20S

    CAP ALUM 330UF 20% 50V RADIAL TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ELXY500ELL331MK20S Bulk 1,598 1
    • 1 $1.51
    • 10 $0.952
    • 100 $0.6576
    • 1000 $0.5007
    • 10000 $0.4369
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    Mouser Electronics ELXY500ELL331MK20S 259
    • 1 $1.02
    • 10 $0.64
    • 100 $0.523
    • 1000 $0.345
    • 10000 $0.329
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    Richardson RFPD ELXY500ELL331MK20S 1
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    Master Electronics ELXY500ELL331MK20S 3,230
    • 1 -
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    • 100 $0.5229
    • 1000 $0.3162
    • 10000 $0.2695
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    Find more ELXY price and stock on Findchips.com

    ELXY Datasheets (237)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ELXY100EC3392MK40S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 3900UF 10V 20% RADIAL Original PDF
    ELXY100ELL102MJ20S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1000UF 10V 20% RADIAL Original PDF
    ELXY100ELL102MK15S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1000UF 10V 20% RADIAL Original PDF
    ELXY100ELL122MJ25S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1200UF 10V 20% RADIAL Original PDF
    ELXY100ELL152MJ30S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1500UF 10V 20% RADIAL Original PDF
    ELXY100ELL152ML15S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1500UF 10V 20% RADIAL Original PDF
    ELXY100ELL181MFB5D Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 180UF 10V 20% RADIAL Original PDF
    ELXY100ELL182MK20S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1800UF 10V 20% RADIAL Original PDF
    ELXY100ELL221MF15D Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 10V 20% RADIAL Original PDF
    ELXY100ELL221MF15S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 10V 20% RADIAL Original PDF
    ELXY100ELL222MK25S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 2200UF 10V 20% RADIAL Original PDF
    ELXY100ELL272MK30S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 2700UF 10V 20% RADIAL Original PDF
    ELXY100ELL331MH12D Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 330UF 10V 20% RADIAL Original PDF
    ELXY100ELL332MK35S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 3300UF 10V 20% RADIAL Original PDF
    ELXY100ELL332ML20S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 3300UF 10V 20% RADIAL Original PDF
    ELXY100ELL391MJC5S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 390UF 10V 20% RADIAL Original PDF
    ELXY100ELL392MK40S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 3900UF 10V 20% RADIAL Original PDF
    ELXY100ELL392ML25S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 3900UF 10V 20% RADIAL Original PDF
    ELXY100ELL471MH15D Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 470UF 10V 20% RADIAL Original PDF
    ELXY100ELL562ML30S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 5600UF 10V 20% RADIAL Original PDF
    ...

    ELXY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELXY

    Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
    Text: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, ELXY npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON

    Untitled

    Abstract: No abstract text available
    Text: UM10689 SSL2109ADB1121 4-channel DC-to-DC LED driver demo board Rev. 1.1 — 13 May 2013 User manual Document information Info Content Keywords SSL2109T, SSL2109AT, SSL2109ADB1121, buck, controller, reference board, LED driver, PWM Abstract This document explains the operation and application of the SSL2109AT


    Original     		PDF UM10689 SSL2109ADB1121 SSL2109T, SSL2109AT, SSL2109ADB1121, SSL2109AT

    1001N

    Abstract: ELXY250E331MH20D lxy cap ELXY500E ELXY160E471MJ16S ELXY500E181MJ20S
    Text: リード形・低インピーダンス品（105℃） 標準品 低Z 耐洗浄 RoHS指令 適合品 LXZ 低Z化 小形化 ● 新規高安定・高導電率電解液高信頼性技術の採用。 ● LXY 105℃ 2,000 ~ 8,000 時間保証。（リプル重畳）


    Original     		PDF 1063Vdc 120Hz 01CV3A 000F0 10Vdc50Vdc3 63Vdc6 XY500E560MF15D ELXY500E680MH12D 1001N ELXY250E331MH20D lxy cap ELXY500E ELXY160E471MJ16S ELXY500E181MJ20S

    Untitled

    Abstract: No abstract text available
    Text: NPTB00050 Not recommended for new designs Contact [email protected] for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power


    Original     		PDF NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007

    ELXY250ESS471MJ20S

    Abstract: ELXY350E ELXY500ESS331MK20S 3300 mf 35v E1001E 1000MF 120MF 2200MF ELXY250ESS331MH20D ELXY100ESS182MK20S
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105C LXZ lower Z downsized @Newly innovative electrolyte and internal architecture are employed @Endurance with ripple current : 105C 2000 to 8000 hours @Solvent-proof type see PRECAUTIONS AND GUIDELINES


    Original     		PDF 63Vdc ELXY500ESS181MJ20S ELXY500ESS221MJ25S ELXY500ESS331MJ30S ELXY500ESS331MK20S ELXY500ESS471MK25S ELXY500ESS561MK30S ELXY500ESS681MK35S ELXY500ESS681ML20S ELXY500ESS821MK40S ELXY250ESS471MJ20S ELXY350E ELXY500ESS331MK20S 3300 mf 35v E1001E 1000MF 120MF 2200MF ELXY250ESS331MH20D ELXY100ESS182MK20S

    Untitled

    Abstract: No abstract text available
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105℃ LXY LXZ P158 Series Lower Z Downsized ・Adoption of innovative electrolyte and new technologies ・Endurance with ripple current : 2,000 to 8,000 hours at 105℃ ・Solvent resistant type see PRECAUTIONS AND GUIDELINES


    Original     		PDF 63Vdc ELXY630Eâ 560MJC5S 680MH15D 680MJ16S 820MH20D

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    NPT25100

    Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR
    Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NPT2022 Gallium Nitride 48V, 100W, DC-2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2 GHz 48V Operation Industry Standard Plastic Package


    Original     		PDF NPT2022 NPT2022 NDS-038

    Untitled

    Abstract: No abstract text available
    Text: UM10478 High-efficiency UBA3070 4-channel DC-to-DC LED driver demo board Rev. 2 — 24 May 2012 User manual Document information Info Content Keywords UBA3070, street, high bay lighting Abstract This document explains the operation and application of the UBA3070


    Original     		PDF UM10478 UBA3070 UBA3070, UBA3070

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package


    Original     		PDF NPT1015 NPT1015 NDS-035

    Untitled

    Abstract: No abstract text available
    Text: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package


    Original     		PDF NPT1015 NPT1015 NDS-035

    sot23-5 transistor T1

    Abstract: SC70JW-8 3216 capacitor LDO sot23 CA SOT23-5 sot23 "material composition" sot23 material composition SOT23-5 REGULATORs t1 SOT23-5 AAT3216
    Text: AAT3216 150mA MicroPower LDO with PowerOK General Description Features The AAT3216 MicroPower™ Low Dropout Linear Regulator is ideally suited for portable applications where low noise, extended battery life and small size are critical. The AAT3216 has been specifically designed for low output noise performance,


    Original     		PDF AAT3216 150mA AAT3216 200mV sot23-5 transistor T1 SC70JW-8 3216 capacitor LDO sot23 CA SOT23-5 sot23 "material composition" sot23 material composition SOT23-5 REGULATORs t1 SOT23-5

    ELXY500E

    Abstract: ELXY350E ELXY ELXY160E ELXY350 120MF 3516b ELXY35 LXV LXY ELXY250E
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105C LXZ Lower Z Downsized @Newly innovative electrolyte and internal architecture are employed @Endurance with ripple current : 2,000 to 8,000 hours at 105C @Solvent resistant type see PRECAUTIONS AND GUIDELINES


    Original     		PDF 63Vdc nELXY500ESS221MJ25S ELXY500ESS331MJ30S ELXY500ESS331MK20S ELXY500ESS471MK25S ELXY500ESS561MK30S ELXY500ESS681MK35S ELXY500ESS681ML20S ELXY500ESS821MK40S ELXY500ESS821ML25S ELXY500E ELXY350E ELXY ELXY160E ELXY350 120MF 3516b ELXY35 LXV LXY ELXY250E

    Untitled

    Abstract: No abstract text available
    Text: NPT1010 Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in


    Original     		PDF NPT1010 2000MHz 900MHz 500-1000MHz EAR99 900MHz) 700mA, NDS-023

    NPT25100

    Abstract: PIMD3
    Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power


    Original     		PDF NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3

    Untitled

    Abstract: No abstract text available
    Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2010 NPT2010 NDS-034

    Untitled

    Abstract: No abstract text available
    Text: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power


    Original     		PDF NPT35015 EAR99 NDS-005

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    ELXY350E

    Abstract: ELXY 120MF ELXY100E
    Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High reliability, Low impedance, 105C LXZ Lower Z Downsized @Adoption of innovative electrolyte and new technologies @Endurance with ripple current : 2,000 to 8,000 hours at 105C @Solvent resistant type see PRECAUTIONS AND GUIDELINES


    Original     		PDF 63Vdc capacELXY500ESS221MJ25S ELXY500ESS331MJ30S ELXY500ESS331MK20S ELXY500ESS471MK25S ELXY500ESS561MK30S ELXY500ESS681MK35S ELXY500ESS681ML20S ELXY500ESS821MK40S ELXY500ESS821ML25S ELXY350E ELXY 120MF ELXY100E

    EKMA160

    Abstract: ELXY EKMG401E101ML40S EKMG101E KZA No809 No809 CE692 EMVE160ADA100MD55G ELXZ250E471MJ16S 342AL
    Text: アルミ電解コンデンサ CAT.No.1001N 目 次 製品検索 製品一覧表 製品体系図 使用上の注意（アルミ非固体） 品番体系 環境対応 製品ガイド 包装仕様 テーピング仕様 シリーズ統廃合 海外生産拠点


    Original     		PDF 1001N 125ESR EKMA160 ELXY EKMG401E101ML40S EKMG101E KZA No809 No809 CE692 EMVE160ADA100MD55G ELXZ250E471MJ16S 342AL

    mvs 100

    Abstract: EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160
    Text: アルミ電解コンデンサ CAT.No.1001N 新しい品番体系に移行させて頂きました。 ホームページ上で新旧品番の照会をして頂くことができます。 こちらからアクセスして頂けます。 目 次 製品検索


    Original     		PDF 1001N mvs 100 EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160