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"Electronic designs inc" Abstract: 24128 EDI414097C70BB EDI414097C70LZB EDI414097C70LZI EDI414097C80BB EDI414097C80LZB Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed through 22 address bits which are entered 11 at a time A0	OCR Scan	PDF	EDI414097C 100ns EDI414097C "Electronic designs inc" 24128 EDI414097C70BB EDI414097C70LZB EDI414097C70LZI EDI414097C80BB EDI414097C80LZB
Untitled Abstract: No abstract text available Text: EDI414097C MDi Electronic Dôiign» Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic Features The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed	OCR Scan	PDF	EDI414097C EDI414097C EDI414097C70LZB EDI414097C80LZB ED1414097C100LZB
Untitled Abstract: No abstract text available Text: ^EDl EDI414097C 4Megx1 Fast Page DRAM ELfCTROMCDESGN&NC 4M egabitx 1 Dynamic RAM CMOS, Monolithic F e a tu re s 4Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70,80,100ns • 16ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power	OCR Scan	PDF	EDI414097C EDI414097C entered11atatime 38cC/W 050TYÎ 01581USA
Untitled Abstract: No abstract text available Text: ^EDI EDI414097C 4Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC ' 4Megabitx 1 Dynamic RAM CMOS, Monolithic The EDI414097C is a high performance, low power CMOS ¡Features Dynamic RAM organized as 4Megabit x1. During Read and W rite cycles each bit is addressed	OCR Scan	PDF	EDI414097C EDI414097C 100ns 24/28Pin