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    EDE5116AFSE Price and Stock

    Elpida Memory Inc EDE5116AFSE-6E-E

    IC,SDRAM,DDR,4X8MX16,CMOS,BGA,84PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components EDE5116AFSE-6E-E 200
    • 1 $6.75
    • 10 $6.75
    • 100 $2.925
    • 1000 $2.7
    • 10000 $2.7
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    EDE5116AFSE Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDE5116AFSE Elpida Memory 512m Bits Ddr2 SDRAM (32m Words x 16-Bits) Original PDF
    EDE5116AFSE-4A-E Elpida Memory 512M bits DDR2 SDRAM (32M words x 16-Bits) Original PDF
    EDE5116AFSE-5C-E Elpida Memory 512M bits DDR2 SDRAM (32M words x 16-Bits) Original PDF
    EDE5116AFSE-6E-E Elpida Memory 512M bits DDR2 SDRAM (32M words x 16-Bits) Original PDF

    EDE5116AFSE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E50

    Untitled

    Abstract: No abstract text available
    Text: EDE5116AFSE Package Drawing 84-ball FBGA Unit: mm 11.0 ± 0.1 0.2 S B 13.0 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.1 S 0.35 ± 0.05 B φ0.12 M S A B 0.8 84-φ0.45 ± 0.05 11.2 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0138-03 Data Sheet E0705E30 Ver. 3.0 62


    Original     		PDF EDE5116AFSE 84-ball ECA-TS2-0138-03 E0705E30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E10

    DDR2-400

    Abstract: DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps/400Mbps (max.)


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E

    DDR2-533

    Abstract: DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E20 DDR2-533 DDR2-667 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E30

    E5116

    Abstract: DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 E5116 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E40

    MT47H64M16* pcb

    Abstract: micron DDR2 pcb layout elpida DDR2 layout techniques MT47H64M16BT-5E MO-207J JEDEC DDR2-400 JESD-79A DDR2 pcb layout MT47H32M16CC-5E elpida DDR2 routing
    Text: Application Report SPRAAC6B – May 2006 Implementing DDR2 PCB Layout on the TMS320DM4xx DMSoc Michael Shust . High Speed HW Productization ABSTRACT This document contains implementation instructions for the DDR2 interface contained


    Original     		PDF TMS320DM4xx TMS320DM4xx MT47H64M16* pcb micron DDR2 pcb layout elpida DDR2 layout techniques MT47H64M16BT-5E MO-207J JEDEC DDR2-400 JESD-79A DDR2 pcb layout MT47H32M16CC-5E elpida DDR2 routing

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6AFSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and


    Original     		PDF 512MB EBE52UD6AFSA EBE52UD6AFSA M01E0107 E0722E20

    561 blue capacitor

    Abstract: fbga84 400um FBGA-84 ELPIDA DDR technical note EDE5116AFSE MB86R01 electrical power system mba01 DQS03
    Text: Application Note MB86R01 ‘Jade’ PCB Design Guide Fujitsu Microelectronics Europe GmbH History Date 23.02.2007 25.05.2010 Author AvT AvT Version 1.0 2.0 Comment Draft version Updated using Japanese Guide 2.0. Changed R1/R2 values in 2.1.1 Vref Considerations. Changed capacitor


    Original     		PDF MB86R01 561 blue capacitor fbga84 400um FBGA-84 ELPIDA DDR technical note EDE5116AFSE MB86R01 electrical power system mba01 DQS03

    tms320c6424 evaluation module

    Abstract: GP546 rpack8-22 mini pci connector 124 pin IS62WV102416BLL-10MLI NAND512W3A2BZA6E BLM41P750SPT IS61WV102416B hd13m MAX3221
    Text: TMS320C6424 Evaluation Module Technical Reference 2007 DSP Development Systems TMS320C6424 Evaluation Module Technical Reference 509125-0001 Rev. A February 2007 SPECTRUM DIGITAL, INC. 12502 Exchange Drive, Suite 440 Stafford, TX. 77477 Tel: 281.494.4505 Fax: 281.494.5310


    Original     		PDF TMS320C6424 TMS320C6424 TP-30 C6424 C6424 tms320c6424 evaluation module GP546 rpack8-22 mini pci connector 124 pin IS62WV102416BLL-10MLI NAND512W3A2BZA6E BLM41P750SPT IS61WV102416B hd13m MAX3221

    EBE52UD6AFSA-5C-E

    Abstract: EDE5116AFSE-5C-E DDR2-533 DDR2-667 EBE52UD6AFSA EBE52UD6AFSA-6E-E EDE5116AFSE-6E-E E0722
    Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Specifications Features • Density: 512MB • Organization  64M words × 64 bits, 2 ranks • Mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in


    Original     		PDF 512MB EBE52UD6AFSA 512MB 200-pin 667Mbps/533Mbps/400Mbps cycles/64ribed M01E0107 E0722E41 EBE52UD6AFSA-5C-E EDE5116AFSE-5C-E DDR2-533 DDR2-667 EBE52UD6AFSA EBE52UD6AFSA-6E-E EDE5116AFSE-6E-E E0722

    pc2-5300

    Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E0853E70 Ver.7.0 Date Published July 2006 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2006 DRAM Selection Guide CONTENTS 1. DDR2


    Original     		PDF E0853E70 240-pin 200-pin M01E0107 pc2-5300 elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Specifications Features • Density: 512MB • Organization ⎯ 64M words × 64 bits, 2 ranks • Mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA ( BGA ) • Package: 200-pin socket type small outline dual in


    Original     		PDF 512MB EBE52UD6AFSA 512MB 200-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0722E40

    EDE5116AFSE-4A-E

    Abstract: EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-533 DDR2-667 EBE52UD6AFSA EBE52UD6AFSA-5C-E EBE52UD6AFSA-6E-E SSTL-18
    Text: DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6AFSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and


    Original     		PDF 512MB EBE52UD6AFSA EBE52UD6AFSA M01E0107 E0722E30 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-533 DDR2-667 EBE52UD6AFSA-5C-E EBE52UD6AFSA-6E-E SSTL-18

    MT47H128M16HG-37E

    Abstract: MT47H64M16BT-37E MT47H128M16HG DDR2 layout mt47h128m16 micron DDR2 pcb layout MT47H128M16HG-3 elpida DDR2 routing JESD79-2B DDR2 pcb layout
    Text: Application Report SPRAAT7D – February 2008 – Revised November 2009 TMS320C6472/TMS320TCI6486 DDR2 Implementation Guidelines Thomas Johnson . Digital Signal Processing Solutions


    Original     		PDF TMS320C6472/TMS320TCI6486 TMS320C6472/TMS320TCI6486 MT47H128M16HG-37E MT47H64M16BT-37E MT47H128M16HG DDR2 layout mt47h128m16 micron DDR2 pcb layout MT47H128M16HG-3 elpida DDR2 routing JESD79-2B DDR2 pcb layout

    E0722

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512MB DDR2 SDRAM SO-DIMM EBE52UD6AFSA 64M words x 64 bits, 2 Ranks Description Features The EBE52UD6AFSA is 64M words × 64 bits, 2 ranks DDR2 SDRAM Small Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and


    Original     		PDF 512MB EBE52UD6AFSA EBE52UD6AFSA M01E0107 E0722E10 E0722