2.4GHz amplifier schematic
Abstract: FPD750SOT89 EB750SOT89BG 26GHz LNA
Text: EB750SOT89BG FPD750SOT89 2.4GHz to 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.4 24.3 15.4 0.95 34.0 2.5 24.3 15.2 0.95 35.0 5V, 100mA 2.6 24.4 15.0 1.0 34.0 DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT89BG
FPD750SOT89
100mA
FPD750SOT89;
30mil
31mil
2.4GHz amplifier schematic
EB750SOT89BG
26GHz LNA
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FPD750SOT89
Abstract: No abstract text available
Text: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively
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EB750SOT89BA
FPD750SOT89
85GHz
24dBm
35dBm
10dBm
100mA
85GHz.
FPD750SOT89.
30mil
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LL1005-FH4N7S
Abstract: 56348 LP750SOT89 RO4003 RO-4003 293D105X0035B2T LL1005-FH2N7S LL1608-FH27NK 2064-0000-00 DSS-044
Text: EB750SOT89AA LP750SOT89 1.85 GHZ LNA EVALUATION BOARD • FEATURES ♦ ♦ ♦ ♦ 0.65 dB Noise Figure 19 dBm Output Power 35 dBm Third-Order Intercept Point SOT89 Surface Mount Package EB750SOT89AA EVALUATION BOARD • DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, reactively-matched, dual-biased, low-noise, high dynamicrange amplifier. Its center operating frequency is 1.85 GHz and has an representative noise figure of
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EB750SOT89AA
LP750SOT89
EB750SOT89AA
LP750SOT89;
RO4003
DOC-009
DSS-044
LL1005-FH4N7S
56348
RO-4003
293D105X0035B2T
LL1005-FH2N7S
LL1608-FH27NK
2064-0000-00
DSS-044
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microstrip
Abstract: FPD750SOT89 Transistor Z14 RO4003 w20220 microstrip board
Text: EB750SOT89AH FPD750SOT89 3.5GHz EVALUATION BOARD • • • • ¥ FEATURES 22dBm P1dB 14dB Gain 0.75dB Noise Figure 40dBm OIP3 Measured @ 11dBm per tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT89AH
FPD750SOT89
22dBm
40dBm
11dBm
100mA
FPD750SOT89.
microstrip
Transistor Z14
RO4003
w20220
microstrip board
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FPD750SOT89
Abstract: No abstract text available
Text: EB750SOT89BB FPD750SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • 23.5dBm Output Power • 23dB Gain ¥ 0.6dB Noise Figure ¥ 34dBm OIP3 measured at 10dBm per tone ¥ Bias Vd = 5V, Id = 100mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT89BB
FPD750SOT89
34dBm
10dBm
100mA,
FPD750SOT89;
30mil
LL1608
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FPD750SOT89
Abstract: 2.2GHz FPD750
Text: EB750SOT89BC FPD750SOT89 2.0GHz PA EVALUATION BOARD FEATURES Frequency GHz 1.85 2.0 2.2 P1dB (dBm) 20.0 20.0 23.0 SSG (dB) 17.0 16.5 16.0 N.F. (dB) 0.7 0.7 0.75 OIP3 (dBm)* 33.5 33.7 34.5 Bias 5V, 50mA *measured with two tones 5MHz apart and Pout = 9.0dBm per tone
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EB750SOT89BC
FPD750SOT89
FPD750SOT89.
24dBm
85GHz
100mA.
31mil
2.2GHz
FPD750
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ro4003
Abstract: 802.11a Amplifier roger rogers FPD750SOT89
Text: EB750SOT89AJ FPD750SOT89 5.6GHz PA EVALUATION BOARD FEATURES • • • • ¥ 24dBm P1dB 11.5dB Gain 1.5dB Noise Figure -46dBc IMD @ 12dBm Pout per Tone Bias VD = 5V, ID = 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It has a distributed
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EB750SOT89AJ
FPD750SOT89
24dBm
-46dBc
12dBm
100mA
15GHz
85GHz.
FPD750SOT89;
20mil
ro4003
802.11a Amplifier
roger
rogers
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Transistor BC 1078
Abstract: stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E TL11 TL13
Text: FPD750SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant
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FPD750SOT89
85GHZ)
FPD750SOT89E:
2002/95/EC)
FPD750SOT89
FPD750SOT89E
EB750SOT89
Transistor BC 1078
stepper
transistor w10
IC 74 L5 438
PHEM transistor as low noise amplifier
SSG 23 TRANSISTOR
FPD750SOT89E
TL11
TL13
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2S110
Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
Text: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant
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FPD750SOT89
85GHZ)
FPD750SOT89E:
2002/95/EC)
FPD750SOT89
EB750SOT89
2S110
transistor bc 647
SSG 23 TRANSISTOR
FPD750SOT89E
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FPD750SOT89
Abstract: transistor Bc 574 FPD750SOT89E TL11 TL13 TRANSISTOR bc 657
Text: FPD750SOT89 Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant
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FPD750SOT89
85GHZ)
FPD750SOT89E:
2002/95/EC)
FPD750SOT89
FPD750SOT89E
EB750SOT89
transistor Bc 574
FPD750SOT89E
TL11
TL13
TRANSISTOR bc 657
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transistor bc 647
Abstract: No abstract text available
Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD750SOT89
25dBm
39dBm
FPD750SOT89
mx1500Î
FPD750SOT89E:
FPD750SOT89E
FPD750SOT89CE
EB750SOT89CE-BC
transistor bc 647
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Transistor BC 1078
Abstract: FPD750SOT89CE FPD750SOT89 TRANSISTOR 8550, SOT89
Text: FPD750SOT89CE FPD750SOT89 CE Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm
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FPD750SOT89CE
FPD750SOT89
25dBm
39dBm
FPD750SOT89CE
25mx1500m
FPD750SOT89CE:
EB750SOT89CE-BC
FPD750SOT89CESR
Transistor BC 1078
FPD750SOT89
TRANSISTOR 8550, SOT89
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Transistor BC 1078
Abstract: 2S110 FPD750SOT89 FPD750SOT89E transistor bc 647
Text: FPD750SOT89 Datasheet 3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant
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FPD750SOT89
85GHZ)
FPD750SOT89E:
2002/95/EC)
FPD750SOT89
EB750SOT89
Transistor BC 1078
2S110
FPD750SOT89E
transistor bc 647
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