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    DUAL TRANSISTORS Search Results

    DUAL TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ALD1105PBL

    Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


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    PDF ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. CERDIP-14 ALD1105PBL inverter 4v to 12v n channel mosfet 500 mA 400 v

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


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    PDF ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. 5V GATE TO SOURCE VOLTAGE MOSFET cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 differential pair cascode CMOS differential amplifier cascode

    transistor 228

    Abstract: SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors
    Text: PRODUCT announcement New SOT-228 Surface Mount Dual Transistors CYTA44D CYT5551D CYT5551HCD 8 7 6 5 1 2 3 4 CYTA4494D 8 7 6 5 1 2 3 4 Dual, Isolated Complementary Transistors Dual, Isolated NPN Transistors features • Dual Transistors in the new SOT-228 eight 8 lead


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    PDF OT-228 CYTA4494D CYTA44D CYT5551D CYT5551HCD OT-223 CYTA44D, CYTA4494D, CYT5551D, transistor 228 SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors

    Untitled

    Abstract: No abstract text available
    Text: LM613 LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference Literature Number: SNOSC11A LM613 Dual Operational Amplifiers, Dual Comparators, and Adjustable Reference General Description Features The LM613 consists of dual op-amps, dual comparators, and


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    PDF LM613 LM613 SNOSC11A 16-pin

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


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    PDF OT-363 QW-R218-026

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


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    PDF OT-26 QW-R218-026

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UG9H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS  DESCRIPTION The UTC UG9H is a dual digital transistor, the transistor elements are independent and obviating interference, so the mounting cost and


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    PDF OT-26 QW-R218-026

    2N3810DCSM

    Abstract: LE17 dual matched PNP
    Text: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


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    PDF 2N3810DCSM -50mA 500mW 600mW MO-041BB) 2N3810DCSM LE17 dual matched PNP

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.


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    PDF OT-26 QW-R218-018

    Untitled

    Abstract: No abstract text available
    Text: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


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    PDF 2N3810DCSM -50mA 500mW 600mW 86mW/Â 43mW/Â MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


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    PDF OT-26 QW-R218-020

    cd4002bcn

    Abstract: CD4012BCN TL 5941 CD4002B CD4002BC CD4012B 4 input nor gate 74LS AN-90 C1995
    Text: CD4002BM CD4002BC Dual 4-Input NOR Gate CD4012BM CD4012BC Dual 4-Input NAND Gate General Description Features These dual gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors They have equal source


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    PDF CD4002BM CD4002BC CD4012BM CD4012BC cd4002bcn CD4012BCN TL 5941 CD4002B CD4012B 4 input nor gate 74LS AN-90 C1995

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


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    PDF LS350

    MD2369A

    Abstract: MD2369AF MD2369AFHXV MD2369AHX MQ2369A MQ2369AHXV
    Text: MD2369AHX, HXV DUAL MD2369AFHXV (DUAL) MHQ2369HX, HXV (QUAD) MQ2369AHXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma. N.Y. 11779 NPN Silicon Dual/Quad Small-Signal Transistors . designed for general-purpose switching and amplifier applications


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    PDF MD2369AHX, MD2369AFHXV MHQ2369HX, MQ2369AHXV MD2369A MD2369AF MH02369A MQ2369A MD2369AFHXV MD2369AHX MQ2369AHXV

    MHQ6002HX

    Abstract: MQ6002 MD6002
    Text: MD6002HX, HXV DUAL MD6002FHXV (DUAL) MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors . . .designed for general-purpose amplifier and switching applications.


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    PDF MD6002HX, MD6002FHXV MHQ6002HX, MQ6002HXV MD6002 MD6002F MHQ6002 MQ6002 MHQ6002HX

    5740

    Abstract: GP-009
    Text: SERIES 5740 DUAL PERIPHERAL/POWER DRIVERS —TRANSIENT-PROTECTED OUTPUTS UDN5742M OUTKJT2 Peripheral and power drivers combining dual logic gates, highcurrent saturated output transistors, and transient-suppression diodes is the Series UDN5740M. These monolithic dual drivers surpass the


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    PDF UDN5742M UDN5740M. 5740 GP-009

    Untitled

    Abstract: No abstract text available
    Text: MD3251AHX, HXV DUAL MD3251AFHXV (DUAL) MHQ3251AHX, HXV (QUAD) M03251AHXV (QUAD) CRYSTAtONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 PNP Silicon Dual/Quad Small-Signal Transistors designed for general-purpose amplifier applications. Matched devices for DC current


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    PDF MD3251AHX, MD3251AFHXV MHQ3251AHX, M03251AHXV MD3251A MD3251AF MHQ3251A MQ3251A

    SBMT2222A

    Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
    Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)


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    PDF 100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A

    A7900

    Abstract: A7628 HJR 4102 relay 9789A GP-009 25CC UDN5741M UDN5742M UDN5743M UDN5744M
    Text: DUAL PERIPHERAL/POW ER D RIVERS TRANSIENT-PRO TECTED OUTPUTS — Peripheral and power drivers combining dual logic gates, high­ current saturated output transistors, and transient-suppression diodes is the Series UDN5740M . These monolithic dual drivers surpass the


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    PDF UDN5742M -9790B -7900B A7900 A7628 HJR 4102 relay 9789A GP-009 25CC UDN5741M UDN5742M UDN5743M UDN5744M

    CD4072BCN

    Abstract: CD4072BC CD4082BCN CD40828
    Text: CD4072BM/CD4072BC Dual 4-Input OR Gate, CD4082BM/CD4082BC Dual 4-Input AND Gate General Description Features These dual gates are m onolithic complementary MOS CMOS integrated circuits constructed with N-and P-channel enhancement mode transistors. They have


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    PDF CD4072BM/CD4072BC, CD4082BM/CD4082BC CD4072BM/CD4072BC CD4082BM/CD4082BC 45VDD 54C/74C AN-90. CD4072BCN CD4072BC CD4082BCN CD40828

    91010-01TX

    Abstract: MHQ6002HX MD6002 MHQ6002
    Text: 4bE J> • b3b7254 GQISfiTB 4 ■ MOTb“F ’^ v £ ? MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD6002HX, HXV (DUAL) MD6002FHXV (DUAL) *MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors


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    PDF b3b7254 MD6002HX, MD6002FHXV MHQ6002HX, MQ6002HXV 91010-01TX MHQ6002HX MD6002 MHQ6002

    CD4002BCN

    Abstract: CD4002BC CD4002BCJ
    Text: Semiconductor CD4002BM/CD4002BC Dual 4-Input NOR Gate CD4012BM/CD4012BC Dual 4-Input NAN D Gate General Description Features These dual gates are monolithic complementary MOS CMOS Integrated circuits constructed with N-and P-channel enhancement mode transistors. They have


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    PDF CD4002BM/CD4002BC, CD4012BM/CD4012BC CD4002BM/CD4002BC CD4012BM/CD4012BC 74gation 54C/74C AN-90. CD4002BCN CD4002BC CD4002BCJ

    F10210

    Abstract: F10211 F10610 F10611
    Text: F10210 F10211l/» F10610"* F10611 DUAL 3-3 OR • DUAL 3-3 NOR FlOK VOLTAGE COMPENSATED ECL GENERAL DESCRIPTION — The F10210 and F10610 are Dual 3-Input 3-O utput OR Gates and the F10211 and F10611 are Dual 3-Input 3-O utput NOR Gates. Each gate has three output transistors driven in parallel, with their emitters brought out on


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    PDF F10210 Vl02111/* F10611 F10210and F10610 F10211 F10611 wir-38 F10210

    CD4002B

    Abstract: CD4002BC CD4002BM CD4012BM
    Text: National Semiconductor CD4002BM/CD4002BC Dual 4-Input NOR Gate CD4012BM/CD4012BC Dual 4-Input NAND Gate General Description Features These dual gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source


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    PDF CD4002BM/CD4002BC CD4012BM/CD4012BC V-10V-15V 54C/74C AN-90. CD4002B CD4002BC CD4002BM CD4012BM