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    Diodes Incorporated DNLS350Y-13

    TRANS NPN 50V 3A SOT89-3
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    Diodes Incorporated DNLS350E-13

    TRANS NPN 50V 3A SOT223-3
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    Diodes Incorporated DPLS350E-13

    TRANS PNP 50V 3A SOT223-3
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    Diodes Incorporated DPLS350Y-13

    TRANS PNP 50V 3A SOT89-3
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    DigiKey DPLS350Y-13 Digi-Reel 3,788 1
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    Newark DPLS350Y-13 Reel 5,000 2,500
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    Diodes Incorporated ZLLS350TA

    DIODE SCHOTTKY 40V 380MA SOD523
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    Bristol Electronics ZLLS350TA 9,265
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    LS350 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LS350 Linear Integrated Systems MONOLITHIC DUAL PNP TRANSISTOR Original PDF
    LS350-2 Linear Integrated Systems MONOLITHIC DUAL PNP TRANSISTORS Original PDF

    LS350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Current Regulator Diode

    Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original
    PDF LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


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    PDF LS350 LS350 275MHzÂ

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    PDF LS350 LS350 275MHzÂ

    LS352

    Abstract: No abstract text available
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN hFE 200 @ 10µA - 1mA TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated IC Collector Current 10mA Maximum Temperatures


    Original
    PDF LS350 LS351 LS352 250mW 500mW OT-23 LS352: LS352

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    PDF LS350 LS350 275MHzÂ

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    PDF LS350 LS350 OT-23 275MHz OT-23

    Untitled

    Abstract: No abstract text available
    Text: LS350 MONOLITHIC DUAL PNP TRANSISTOR Linear Systems Monolithic Dual PNP Transistor The LS350 is a monolithic pair of PNP transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original
    PDF LS350

    ls352

    Abstract: LS351 ic 353 LS350
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    PDF LS350 LS351 LS352 275MHz 250mW 500mW LS350: LS351 LS352: LS351: ls352 ic 353

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


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    PDF IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement"

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


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    PDF LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


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    PDF LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


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    PDF LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


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    PDF U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


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    PDF U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


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    PDF LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


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    PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


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    PDF SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143

    Untitled

    Abstract: No abstract text available
    Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    PDF LS310 LS311 LS312 LS313 250MHz 250mW 500mW

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


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    PDF SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice

    ultra low Ciss jfet

    Abstract: Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice LS3954 J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112
    Text: LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. LOW LEAKAGE IG = 20pA TYP. LOW NOISE en= 10nV/√Hz TYP. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


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    PDF LS3954A LS3954 LS3955 LS3956 LS3958 10nV/Hz 400mW ultra low Ciss jfet Photo Transistor d12 Dual N-Channel JFET 2n3955 transistor spice J310 jfet ultra low igss pA ultra low igss pA mosfet transistor j201 transistor j112

    J201 Replacement

    Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
    Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current


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    PDF IT130A IT130 IT131 IT132 250mW 500mW J201 Replacement JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"

    ultra low igss pA

    Abstract: ultra low igss pA mosfet n channel
    Text: LS5301, PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR LF5301, PF5301, & 2N5301 HIGH INPUT INPEDANCE HIGH GAIN IG = 0.100 pA gfs = 70 µS ABSOLUTE MAXIMUM RATINGS1 @ 25 °C unless otherwise stated


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    PDF LS5301, PF5301 LF5301, PF5301, 2N5301 300mW ultra low igss pA ultra low igss pA mosfet n channel

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS350 LS351 LS352 MONOLITHIC DUAL Linear Integrated Systems 'ËËËËËËËËËËUÈËËËËÊ TRANSISTORS FE A TU R E S HIGH GAIN hpE > 200 @ 10^A -1 mA TIGHT VBE MATCHING lVBE1-VBE2l = 0 2mV TYP 275M HzTYP. @ 1mA HIGH C1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1


    OCR Scan
    PDF LS350 LS351 LS352 LS35Q: LS352:

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES 275MHz TYP. @ 1mA C1 -65° to +200°C +150*0 26 X 29 MILS h FE 25 45 60 MIN. V Ic = 10jjA Emitter to Base Voltage 6.2 6.2 6.2 MIN. V Ie = 10mA Collector to Collector Voltage


    OCR Scan
    PDF LS350 LS351 LS352 10nA-1mA 275MHz 250mW 500mW LS351 LS352