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    DUAL CHANNEL BARRIER Search Results

    DUAL CHANNEL BARRIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    DUAL CHANNEL BARRIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cpri

    Abstract: SN65LVCP1412
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


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    PDF SN65LVCP1412 1200mV 20GHz 24-Terminal cpri SN65LVCP1412

    SN65LVCP1412

    Abstract: No abstract text available
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


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    PDF SN65LVCP1412 1200mV 20GHz SN65LVCP1412

    K28-5

    Abstract: SN65LVCP1412
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


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    PDF SN65LVCP1412 1200mV 20GHz 24-Terminal K28-5 SN65LVCP1412

    SN65LVCP1412

    Abstract: No abstract text available
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


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    PDF SN65LVCP1412 1200mV 20GHz 24-Terminal SN65LVCP1412

    SN65LVCP1412

    Abstract: No abstract text available
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


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    PDF SN65LVCP1412 1200mV 20GHz SN65LVCP1412

    SN65LVCP1412

    Abstract: No abstract text available
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


    Original
    PDF SN65LVCP1412 1200mV 20GHz 24-Terminal SN65LVCP1412

    10Gbase KR

    Abstract: SN65LVCP1412
    Text: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up


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    PDF SN65LVCP1412 1200mV 20GHz 24-Terminal 10Gbase KR SN65LVCP1412

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 65 A, 2.6 mΩ Features „ Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


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    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features „ Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original
    PDF FDMS3008SDC FDMS3008SDC

    1351D

    Abstract: FDPC8011S FDPC8011
    Text: PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel General Description „ Max rDS on = 7.3 mΩ at VGS = 4.5 V, ID = 12 A This device includes two specialized N-Channel MOSFETs in a Q2: N-Channel dual package. The switch node has been internally connected to


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    PDF FDPC8011S FDPC8011S 1351D FDPC8011

    fdms3600

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


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    PDF FDMS3600S FDMS3600S fdms3600

    Untitled

    Abstract: No abstract text available
    Text: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing


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    PDF FDMC7200S power33

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


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    ic 22cf

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3664S FDMS3664S ic 22cf

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    FDMS3660S

    Abstract: MO-240 501B
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3660S FDMS3660S MO-240 501B

    22CF21CD

    Abstract: 11-CQ2 22cF
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


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    PDF FDMS3668S FDMS3668S 22CF21CD 11-CQ2 22cF

    Untitled

    Abstract: No abstract text available
    Text: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


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    PDF FDMC2512SDC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


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    FDMS3620S

    Abstract: No abstract text available
    Text: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


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    PDF FDMS3620S FDMS3620S

    FDMS3620S

    Abstract: No abstract text available
    Text: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


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    PDF FDMS3620S FDMS3620S

    Untitled

    Abstract: No abstract text available
    Text: FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


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    PDF FDMS3602S FDMS3602S

    DTC in UDS

    Abstract: MC68230 MC68440 Motorola MC68230 LSHA mc68450 74LS245 74LS373 M68000 MC68008
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68440 Technical Sum m ary Dual-Channel Direct Memory Access Controller M68000 microprocessors utilize state-of-the-art MOS technology to maximize performance and throughput. The MC68440 dual-channel direct memory access


    OCR Scan
    PDF MC68440 M68000 MC68440 a23/d15 a22/d14 a21/d13 a20/d12 a19/d11 a18/d10 DTC in UDS MC68230 Motorola MC68230 LSHA mc68450 74LS245 74LS373 MC68008