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    FDMS3602S Price and Stock

    Rochester Electronics LLC FDMS3602S

    MOSFET 2N-CH 25V 15A/26A POWER56
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    DigiKey FDMS3602S Bulk 176
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    onsemi FDMS3602S

    MOSFET 2N-CH 25V 15A/26A POWER56
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    FDMS3602S Digi-Reel 1
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    Avnet Americas FDMS3602S Reel 0 Weeks, 2 Days 491
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    FDMS3602S Reel 3,000
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    Rochester Electronics FDMS3602S 1,639 1
    • 1 $1.64
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    Flip Electronics FDMS3602S 88,507
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    Flip Electronics FDMS3602S

    MOSFET 2N-CH 25V 15A/26A POWER56
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    DigiKey FDMS3602S Reel 400
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    onsemi FDMS3602S-P

    MOSFET 2N-CH 25V 15A 8PQFN
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    Avnet Americas FDMS3602S-P Reel 0 Weeks, 2 Days 582
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    Rochester Electronics FDMS3602S-P 53,188 1
    • 1 $1.39
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    Flip Electronics FDMS3602S-P 74,746
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    Flip Electronics FDMS3602S-P

    MOSFET 2N-CH 25V 15A 8PQFN
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    DigiKey FDMS3602S-P Bulk 500
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    Find more FDMS3602S price and stock on Findchips.com

    FDMS3602S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS3602S Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 25V DUAL POWER56 Original PDF

    FDMS3602S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c151A

    Abstract: FDMS3602S
    Text: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A


    Original     		PDF FDMS3602S c151A FDMS3602S

    FDMS3602S

    Abstract: FDMS3602
    Text: FDMS3602S PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3602S FDMS3602S FDMS3602

    Untitled

    Abstract: No abstract text available
    Text: FDMS3602S PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3602S

    Untitled

    Abstract: No abstract text available
    Text: FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF FDMS3602S FDMS3602S