Untitled
Abstract: No abstract text available
Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V • • • • • • • • ID TA = 25°C -4.3A -4.0A -2.8A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMP2100U
AEC-Q101
DS35718
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dmp2100u
Abstract: 35P marking DMP2100U-7
Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMP2100U
AEC-Q101
DS35718
dmp2100u
35P marking
DMP2100U-7
|
Untitled
Abstract: No abstract text available
Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V • • • • • • • • ID TA = 25°C -4.3A -4.0A -2.8A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMP2100U
AEC-Q101
DS35718
|