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    DMN2015UFDE

    Abstract: No abstract text available
    Text: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications


    Original     		PDF DMN2015UFDE U-DFN2020-6 AEC-Q101 DS35560 DMN2015UFDE

    DMN2015UFDE

    Abstract: No abstract text available
    Text: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS ON max ID max TA = 25°C 11.6mΩ @ VGS = 4.5V 10.5A 15mΩ @ VGS = 2.5V 9.4A V(BR)DSS • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm


    Original     		PDF DMN2015UFDE AEC-Q101 DS35560 DMN2015UFDE

    DMN2015UFDE-7

    Abstract: No abstract text available
    Text: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications


    Original     		PDF DMN2015UFDE U-DFN2020-6 AEC-Q101 DS35560 DMN2015UFDE-7

    DMN2015UFDE

    Abstract: No abstract text available
    Text: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits RDS ON max ID max TA = 25°C 11.6mΩ @ VGS = 4.5V 10.5A 15mΩ @ VGS = 2.5V 9.4A V(BR)DSS • • • • • • • 20V 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm


    Original     		PDF DMN2015UFDE AEC-Q101 DS35560 DMN2015UFDE